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Joshi, V and Gupta, SD and Chaudhuri, RR and Shrivastava, M (2023) Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN Buffer. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Munshi, MA and Mir, MA and Malik, R and Joshi, V and Chaudhuri, RR and Khan, Z and Shrivastava, M (2023) Understanding Temperature Dependence of ESD Reliability in AlGaN/GaN HEMTs. In: UNSPECIFIED.
Majumder, S and Vadodariya, K and Radhakrishna, V and Shrivastava, M and Kashyap, GK (2024) Modeling of X-Ray Pulsar Timing Profiles and Its Impact on Position Estimation for Navigation. In: 2024 IEEE Space, Aerospace and Defence Conference, SPACE 2024, 22 July 2024- 23 July 2024, Bangalore, pp. 794-798.
Kumar, J and Dar, AB and Shah, AA and Amogh, KM and Chattaraj, S and Patbhaje, U and Rai, AK and Verma, R and Shrivastava, M (2024) Breakthrough Metal/Graphene Interface Phonon Engineering for Reliable Graphene Based-Heat Spreaders. In: 2024 IEEE International Reliability Physics Symposium, IRPS, 14 April 2024through 18 April 2024, Grapevine.
Patbhaje, U and Verma, R and Kumar, J and Dar, AB and Shrivastava, M (2024) Decoupling Current and Voltage Mediated Breakdown Mechanisms in CVD MoS2FETs. In: 2024 IEEE International Reliability Physics Symposium, IRPS, 14 April 2024through 18 April 2024, Grapevine.
Chaudhuri, RR and Joshi, V and Wani, SS and Karthik, SR and Malik, RR and Shrivastava, M (2024) Experimental Insights into the Role of Inter-valley and Defect Transitions of Hot Electrons in Determining Self-heating in AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium (IRPS),2024, 14-18 April 2024, Grapevine.
Verma, R and Patbhaje, U and Shah, AA and Kumar, J and Chaudhuri, RR and Dar, AB and Shrivastava, M (2024) Hot Carrier Dynamics and Electrical Breakdown Analysis in 2D Transition Metal Dichalcogenide FETs. In: IEEE International Reliability Physics Symposium, IRPS 2024, 14 April 2024 through 18 April 2024, Grapevine.
Shah, AA and Verma, R and Chaudhuri, RR and Bashir Dar, A and Kumar, J and Rai, AK and Chattaraj, S and Shrivastava, M (2024) Electric Field Coupled Molecular Dynamic Insights into Anisotropic Reliability Issues of Monolayer MoS2 Based 2D FETs. In: IEEE International Reliability Physics Symposium, IRPS 2024, 14 April 2024through 18 April 2024, Grapevine.
Goyal, M and Chaturvedi, M and Kumar, R and Vaidya, M and Shrivastava, M (2024) Load-line Dependent Current Filament Dynamics in N anoscale SCR Devices. In: IEEE International Reliability Physics Symposium, IRPS 2024, 14 April 2024through 18 April 2024, Grapevine.
Goyal, M and Chaturvedi, M and Kumar, R and Vaidya, M and Shrivastava, M (2024) Missing Trigger Circuit Action and Device Engineering for Conventional Nanoscale SCR. In: IEEE International Reliability Physics Symposium, IRPS 2024, 14 April 2024through 18 April 2024, Grapevine.
Mir, MA and Thakare, A and Munshi, MA and Avinash, V and Wani, S and Khan, Z and Chaudhuri, R and Karthik, S and Malik, R and Joshi, V and Shrivastava, M (2024) On the Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium, IRPS 2024, 14 April 2024through 18 April 2024, Grapevine.
Ray, P and Verma, R and Nyak, B and Chakraborty, SK and Shrivastava, M and Sahoo, PK (2024) Probing the Origin of Photocurrent in 2D Bilayer MoSe-WSe Lateral Heterostructure. In: UNSPECIFIED.
Nayak, B and Verma, R and Ray, P and Chakraborty, SK and Shrivastava, M and Sahoo, PK (2024) Robust Growth of Electronic Grade p-type Large Area 2D WSe2 and High-performance PMOS Transistor. In: UNSPECIFIED.
Gautam, SK and Variar, HB and Luo, J and Shi, N and Marreiro, D and Mallikarjunaswamy, S and Shrivastava, M (2023) 3D Approaches to Engineer Holding Voltage of SCR. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Kumar, J and Kuruva, H and Variar, HB and Patbhaje, U and Shrivastava, M (2023) Atomic-level Insight and Quantum Chemistry of Ambient Reliability Issues of the TMDs Devices. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Rai, AK and Variar, HB and Shrivastava, M (2023) Circuit Reliability of MoS_2 Channel Based 2D Transistors. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Mir, MA and Joshi, V and Chaudhuri, RR and Munshi, MA and Malik, RR and Shrivastava, M (2023) Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Variar, HB and Gautam, SK and Kumar, A and Amogh, KM and Luo, J and Shi, N and Marreiro, D and Mallikarjunaswamy, S and Shrivastava, M (2023) Engineering Custom TLP I-V Characteristic Using a SCR-Diode Series ESD Protection Concept. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Mishra, A and Kumar, BS and Monishmurali, M and Suzaad, SA and Kumar, S and Sanjay, KP and Singh, AK and Gupta, A and Shrivastava, M (2023) Extremely Large Breakdown to Snapback Voltage Offset (V_t1 > > V_BD): Another Way to Improve ESD Resilience of LDMOS Devices. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Monishmurali, M and Kranthi, NK and Boselli, G and Shrivastava, M (2023) Impact of Thin-oxide Gate on the On-Resistance of HV-PNP Under ESD Stress. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Jatin, J and Monishmurali, M and Shrivastava, M (2023) Multi-finger turn-on: A potential cause of premature failure in Drain Extended HV Nanosheet Devices. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Verma, R and Patbhaje, U and Kumar, J and Rai, AK and Shrivastava, M (2023) OFF State Reliability Challenges of Monolayer WS2FET Photodetector: Impact on the Dark and Photo-Illuminated State. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Raj, H and Joshi, V and Chaudhuri, RR and Malik, RR and Shrivastava, M (2023) Physical Insights into the DC and Transient Reverse Bias Reliability of β-Ga2O3Based Vertical Schottky Barrier Diodes. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Malik, RR and Joshi, V and Chaudhuri, RR and Mir, MA and Khan, Z and Shaji, AN and Bhattacharya, M and Vitthal, AT and Shrivastava, M (2023) Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTs. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Chaudhuri, RR and Joshi, V and Gupta, A and Joshi, T and Malik, RR and Mir, MA and Gupta, SD and Shrivastava, M (2023) Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Patbhaje, U and Verma, R and Kumar, J and Ansh, A and Shrivastava, M (2023) Unveiling Field Driven Performance Unreliabilities Governed by Channel Dynamics in MoSe2FETs. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Malik, RR and Shaji, AN and Jayshree, ; and Khan, Z and Bhattacharya, M and Munshi, MA and Chaudhuri, RR and Joshi, V and Shrivastava, M (2023) Interplay of Surface Passivation and Electric Field in Determining ESD Behaviour of p-GaN Gated AlGaN/GaN HEMTs. In: UNSPECIFIED.
Variar, HB and Singh, A and Soni, A and Shrivastava, M (2022) Exploring the Feasibility of AlN/GaN HEMTs for THz Applications Using a Novel Device-Circuit Co-Design Approach. In: 2022 IEEE International Conference on Emerging Electronics, 11- 14 Dec 2022, Bangalore.
Sinha, R and Sambandan, S and Shrivastava, M (2022) On the ESD behavior of a-Si:H based diode-connected thin- film transistors. In: 2022 IEEE International Conference on Emerging Electronics, 11- 14 Dec 2022, Bangalore.
Sinha, R and Sambandan, S and Shrivastava, M (2022) On the ESD behavior of hydrogenated amorphous silicon based high-voltage TFTs. In: 2022 IEEE International Conference on Emerging Electronics,, 11- 14 Dec 2022, Bangalore.
Jatin, J and Monishmurali, M and Gautam, SK and Shrivastava, M (2022) Performance and Reliability Co-Design of HV devices in Vertically Stacked Nanosheet Technology. In: 2022 IEEE International Conference on Emerging Electronics,, 11- 14 Dec 2022, Bangalore.
Gautam, SK and Jatin, J and Monishmurali, M and Shrivastava, M (2022) The Physical Insight into Holding Voltage Engineering of SCR for ESD Protection. In: 2022 IEEE International Conference on Emerging Electronics, 11 - 14 Dec 2022, Bangalore.
Variar, HB and Singh, A and Somayaji, J and Shrivastava, M (2022) Device-Circuit Co-Design and ESD/HCI Reliability Aware Design of Field Plated RF LDMOS Devices. In: 2022 IEEE International Conference on Emerging Electronics, ICEE 2022, 11-14 Dec2022, Bangalore.
Monishmurali, M and Kranthi, NK and Boselli, G and Shrivastava, M (2022) Effect of Source & Drain Side Abutting on the Low Current Filamentation in LDMOS-SCR Devices. In: 2022 IEEE International Reliability Physics Symposium, IRPS 2022, 27 March 2022 through 31 March 2022, Dallas, 6C11-6C16.
Malik, A and Nath, B and Ramamurthy, PC and Panchal, A and Shrivastava, M (2022) Influence of Graphene Dispersion in P3HT-Based Thin Film Organic Field Effect Transistors. In: 2022 IEEE International Conference on Emerging Electronics, 11- 14 Dec 2022, Bangalore, India.
Mishra, A and Boeila, SK and Singh, AK and Gupta, S and Singh, SK and Monishmurali, M and Gupta, A and Shrivastava, M (2022) Inverted SOA and Transient Non-Linearity of LDMOS Devices With RESURF-Implant. In: 2022 IEEE International Conference on Emerging Electronics, 11 - 14 December 2022, Bangalore, India.
Variar, HB and Somayaji, J and Shrivastava, M (2022) Performance and Reliability Co-design of Ultra High Voltage LDMOS Devices. In: 2022 IEEE International Conference on Emerging Electronics, 11 - 14 Dec 2022, Bangalore.
Variar, HB and Somayaji, J and Shrivastava, M (2022) Physical Insights Into the ESD Behavior of Field Plated UHV LDMOS Devices. In: 2022 IEEE International Conference on Emerging Electronics, 11-14 December 2022, Bangalore, India.
Kumar, J and Patbhaje, U and Shrivastava, M (2022) Unveiling Additional Ambient Degradation Issues of Phosphorene FETs Under Laser Exposure and Positive Gate Bias. In: 2022 IEEE International Conference on Emerging Electronics, 11- 14 Dec 2022, Bangalore, India.
Monishmurali, M and Shrivastava, M (2021) A Novel High Voltage Drain Extended FinFET SCR for SoC Applications. In: 2021 IEEE International Reliability Physics Symposium, IRPS 2021, 21-24 Mar 2021, Monterey, Virtual.
Monishmurali, M and Shrivastava, M (2021) Peculiar Current Instabilities Failure Mechanism in Vertically Stacked Nanosheet ggN-FET. In: 2021 IEEE International Reliability Physics Symposium, IRPS 2021, 21-24 Mar 2021, Monterey.
Jhnanesh Somayaji, B and Monishmurali, M and Ajay Singh, N and Kranthi, K and Shrivastava, M (2020) 3D TCAD studies of snapback driven failure in punch-through TVS diodes under system level esd stress conditions. In: Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 13 - 18 September, Reno.
Kranthi, NK and Di Sarro, J and Sankaralingam, R and Boselli, G and Shrivastava, M (2020) Insights into the system-level IEC ESD failure in high voltage DeNMOS-SCR for automotive applications. In: Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 13 - 18 September, Reno.
Chaudhuri, RR and Joshi, V and Gupta, SD and Shrivastava, M (2020) Interaction of hot electrons with Carbon doped GaN buffer in AlGaN/GaN HEMTs: Correlation with lateral electric field and device failure. In: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 13 - 18 September 2020, Virtual, Online, pp. 341-344.
Kumar, J and Ansh, A and Kuruva, H and Shrivastava, M (2020) Defect Assisted Metal-TMDs Interface Engineering: A First Principle Insight. In: Device Research Conference - Conference Digest, DRC, 21-24 June 2020, Columbus; United States.
Sinha, R and Bhattacharya, R and Sambandan, S and Shrivastava, M (2020) Threshold Voltage Shift in a-Si:H Thin film Transistors under ESD stress Conditions. In: 2020 IEEE International Reliability Physics Symposium, IRPS 2020, 28 April 2020 - 30 May 2020, Dallas, TX, USA.
Ansh, A and Sheoran, G and Kumar, J and Shrivastava, M (2020) First Insights into Electro-Thermal Stress Driven Time-Dependent Permanent Degradation Failure of CVD Monolayer MoS2 Channel. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA.
Kranthi, NK and Garg, C and Kumar, BS and Salman, A and Boselli, G and Shrivastava, M (2020) How to Achieve Moving Current Filament in High Voltage LDMOS Devices: Physical Insights Design Guidelines for Self-Protected Concepts. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA, USA.
Monishmurali, M and Paul, M and Shrivastava, M (2020) Improved Turn-on Uniformity & Failure Current Density by n-& p-Tap Engineering in Fin Based SCRs. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA, USA.
Gupta, SD and Joshi, V and Chaudhuri, RR and Kr Singh, A and Guha, S and Shrivastava, M (2020) On the Root Cause of Dynamic on Resistance Behavior in AlGaN/GaN HEMTs. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA.
Kranthi, NK and Sampath Kumar, B and Salman, A and Boselli, G and Shrivastava, M (2020) Design Insights to Address Low Current ESD Failure and Power Scalability Issues in High Voltage LDMOS-SCR Devices. In: 2020 IEEE International Reliability Physics Symposium, IRPS 2020, 28 April-30 May 2020, Virtual, Online; United States.
Kumar, J and Ansh, K and Yadav, A and Singh, A and Naclerio, A and Zakharov, D and Kidambi, P and Shrivastava, M (2020) Physical Insights into Phosphorene Transistor Degradation under Exposure to Atmospheric Conditions and Electrical Stress. In: 2020 IEEE International Reliability Physics Symposium, IRPS 2020, 28 April-30 May, 2020, Virtual, Online; United States.
Shankar, B and Soni, A and Dutta Gupta, S and Shikha, S and Singh, S and Raghavan, S and Shrivastava, M (2019) Time Dependent Early breakdown of AIGaN/GaN Epi Stacks and Shift in SOA Boundary of HEMTs under Fast Cyclic Transient Stress. In: 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, 1 December 2018- 5 December 2018, San Francisco, 34.6.1-34.6.4.
Kumar, J and Meersha, A and Ansh, A and Shrivastava, M (2019) A First principle insight into defect assisted contact engineering at the metal-graphene and metal-phosphorene interfaces. In: 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019, 4 - 6 September 2019, Udine.
Kranthi, NK and Kumar, BS and Salman, A and Boselli, G and Shrivastava, M (2019) Performance and Reliability Co-design of LDMOS-SCR for Self-Protected High Voltage Applications On-Chip. In: 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019, 19 May 2019-23 May 2019, Shanghai, pp. 407-410.
Karmel Kranthi, N and Salman, A and Boselli, G and Shrivastava, M (2019) Current Filament Dynamics under ESD Stress in High Voltage (Bidirectional) SCRs and It's Implications on Power Law Behavior. In: 2019 IEEE International Reliability Physics Symposium, IRPS 2019, 31 March 2019 - 4 April 2019, Monterey.
Mishra, A and Meersha, A and Kranthi, NK and Trivedi, K and Variar, HB and Veenadhari Bellamkonda, NS and Raghavan, S and Shrivastava, M (2019) First Demonstration and Physical Insights into Time-Dependent Breakdown of Graphene Channel and Interconnects. In: 2019 IEEE International Reliability Physics Symposium, IRPS 2019, 31 March 2019 - 4 April 2019, Monterey.
Karmel Kranthi, N and Sampath Kumar, B and Salman, A and Boselli, G and Shrivastava, M (2019) Physical Insights into the Low Current ESD Failure of LDMOS-SCR and its Implication on Power Scalability. In: 2019 IEEE International Reliability Physics Symposium, IRPS 2019, 31 March 2019 - 4 April 2019, Monterey.
Hemanjaneyulu, K and Khaneja, M and Meersha, A and Variar, HB and Shrivastava, M (2018) Comprehensive Computational Modelling Approach for Graphene FETs. In: 4th IEEE International Conference on Emerging Electronics, ICEE 2018, 17-19 December 2018, Bengaluru.
Kumar, BS and Paul, M and Gossner, H and Shrivastava, M (2018) Physical insights into the ESD behavior of drain extended FinFETs. In: 40th Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2018, 23 - 28 September 2018, Reno.
Shankar, B and Singh, R and Sengupta, R and Khand, H and Soni, A and Gupta, SD and Raghavan, S and Gossner, H and Shrivastava, M (2018) Trap assisted stress induced ESD reliability of GaN schottky diodes. In: 40th Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2018, 23 - 28 September 2018, Reno.
Rai, AK and Shah, AA and Kumar, J and Chattaraj, S and Dar, AB and Patbhaje, U and Shrivastava, M (2024) MoS2 Field-Effect Transistor Performance Enhancement by Contact Doping and Defect Passivation via Fluorine Ions and Its Cyclic Field-Assisted Activation. In: ACS Nano, 18 (8). pp. 6215-6228.
Mir, MA and Joshi, V and Chaudhuri, RR and Munshi, MA and Malik, RR and Shrivastava, M (2024) Physical Insights Into the Drain Current Injection-Induced Device Instabilities in AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 71 (9). pp. 5251-5257.
Nath, B and Chaudhuri, RR and Shrivastava, M and Ramamurthy, PC and Mahapatra, DR and Hegde, G (2024) Role of transition metal iodides in defect and charge dynamics of perovskite solar cells. In: Solar Energy, 282 .
Munshi, MA and Mir, MA and Joshi, V and Chaudhuri, RR and Malik, R and Shrivastava, M (2024) Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer. In: IEEE Transactions on Electron Devices .
Ansh, A and Patbhaje, U and Kumar, J and Meersha, A and Shrivastava, M (2023) Origin of electrically induced defects in monolayer MoS2 grown by chemical vapor deposition. In: Communications Materials, 4 (1).
Kumar, J and Patbhaje, U and Shrivastava, M (2022) Breathing Mode's Temperature Coefficient Estimation and Interlayer Phonon Scattering Model of Few-Layer Phosphorene. In: ACS Omega, 7 (48). pp. 43462-43467.
Joshi, V and Gupta, SD and Chaudhuri, RR and Shrivastava, M (2022) Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic RONin AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 69 (11). pp. 6035-6042.
Soni, A and Shrivastava, M (2022) Implications of Various Charge Sources in AlGaN/GaN Epi-Stack on the Drain & Gate Connected Field Plate Design in HEMTs. In: IEEE Access, 10 . pp. 74533-74541.
Kumar, J and Patbhaje, U and Shrivastava, M (2022) Role of Channel Inversion in Ambient Degradation of Phosphorene FETs. In: IEEE Transactions on Electron Devices, 69 (6). pp. 3353-3358.
Kranthi, NK and Sarro, JD and Rajagopal, K and Kunz, H and Sankaralingam, R and Boselli, G and Shrivastava, M (2022) Unique Rise Time Sensitivity Leading to Air Discharge System-Level ESD Failures in Bidirectional High Voltage SCRs. In: IEEE Transactions on Electron Devices, 69 (5). pp. 2552-2559.
Kumar, J and Meersha, A and Variar, HB and Mishra, A and Shrivastava, M (2022) Carbon Vacancy Assisted Contact Resistance Engineering in Graphene FETs. In: IEEE Transactions on Electron Devices, 69 (4). pp. 2066-2073.
Hemanjaneyulu, K and Kumar, J and Shrivastava, M (2022) Gaps in the Y-Function Method for Contact Resistance Extraction in 2D Few-Layer Transition Metal Dichalcogenide Back-Gated FETs. In: IEEE Electron Device Letters, 43 (4). pp. 635-638.
Mishra, A and Shrivastava, M and Gupta, A (2022) The Root Cause Behind a Peculiar Dual-Mode ON-State Breakdown in High Voltage LDMOS. In: IEEE Transactions on Electron Devices, 69 (4). pp. 1906-1911.
Hemanjaneyulu, K and Meersha, A and Kumar, J and Shrivastava, M (2022) Unveiling Unintentional Fluorine Doping in TMDs During the Reactive Ion Etching: Root Cause Analysis, Physical Insights, and Solution. In: IEEE Transactions on Electron Devices, 69 (4). pp. 1956-1963.
Kranthi, NK and Boselli, G and Shrivastava, M (2022) HV-LDMOS Device Engineering Insights for Moving Current Filament to Enhance ESD Robustness. In: IEEE Transactions on Electron Devices, 69 (3). pp. 1242-1250.
Kumar, J. and Shrivastava, M. (2022) Role of Chalcogen Defect Introducing Metal-Induced Gap States and Its Implications for Metal-TMDs' Interface Chemistry. In: ACS Omega, 8 (11). pp. 10176-10184.
Kumar, J and Shrivastava, M (2022) Role of Chalcogen Defect Introducing Metal-Induced Gap States and Its Implications for Metal–TMDs’ Interface Chemistry. In: ACS Omega .
Dutta Gupta, S and Joshi, V and Chaudhuri, RR and Shrivastava, M (2022) Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control over the 2-DEG. In: IEEE Transactions on Electron Devices, 69 (3). pp. 1608-1611.
Ansh, Ansh and Shrivastava, M (2022) Superior resistance switching in monolayer MoS2 channel-based gated binary resistive random-access memory via gate-bias dependence and a unique forming process. In: Journal of Physics D: Applied Physics, 55 (8).
Gupta, SD and Joshi, V and Chaudhuri, RR and Shrivastava, M (2021) Part I: Physical Insights into Dynamic RONBehavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 68 (11). pp. 5720-5727.
Joshi, V and Dutta Gupta, S and Roy Chaudhuri, R and Shrivastava, M (2021) Physical Insights into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs - Part i. In: IEEE Transactions on Electron Devices, 68 (1). pp. 72-79.
Chaudhuri, RR and Joshi, V and Gupta, SD and Shrivastava, M (2021) On the Channel Hot-Electron's Interaction with C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 68 (10). pp. 4869-4876.
Shrivastava, M and Ramgopal Rao, V (2021) A Roadmap for Disruptive Applications and Heterogeneous Integration Using Two-Dimensional Materials: State-of-the-Art and Technological Challenges. In: Nano Letters .
Kranthi, NK and Sarro, JD and Sankaralingam, R and Boselli, G and Shrivastava, M (2021) System-Level IEC ESD Failures in High-Voltage DeNMOS-SCR: Physical Insights and Design Guidelines. In: IEEE Transactions on Electron Devices, 68 (9). pp. 4242-4250.
Joshi, V and Gupta, SD and Chaudhuri, RR and Shrivastava, M (2021) Interplay between Surface and Buffer Traps in Governing Breakdown Characteristics of AlGaN/GaN HEMTs - Part II. In: IEEE Transactions on Electron Devices, 68 (1). pp. 80-87.
Kumar, J and Shrivastava, M (2021) First-Principles Molecular Dynamics Insight into the Atomic Level Degradation Pathway of Phosphorene. In: ACS Omega .
Kumar, J and Ansh, Ansh and Shrivastava, M (2021) Introduction of near to Far Infrared Range Direct Band Gaps in Graphene: A First Principle Insight. In: ACS Omega .
Dutta Gupta, S and Joshi, V and Roy Chaudhuri, R and Shrivastava, M (2021) Observations regarding deep-level states causing p-type doping in AlTiO gate and positive threshold voltage shift in AlGaN/GaN high electron mobility transistors. In: Journal of Applied Physics, 130 (1).
Ansh, A and Kumar, J and Sheoran, G and Shrivastava, M (2020) Electrothermal transport induced material reconfiguration and performance degradation of CVD-grown monolayer MoS2 transistors. In: npj 2D Materials and Applications, 4 (1).
Kumar, J and Ansh, . and Shrivastava, M (2020) Stone - Wales Defect and Vacancy-Assisted Enhanced Atomic Orbital Interactions between Graphene and Ambient Gases: A First-Principles Insight. In: ACS Omega, 5 (48). pp. 31281-31288.
Shankar, B and Shikha, S and Singh, A and Kumar, J and Soni, A and Dutta Gupta, S and Raghavan, S and Shrivastava, M (2020) Time Dependent Shift in SOA Boundary and Early Breakdown of Epi-Stack in AlGaN/ GaN HEMTs under Fast Cyclic Transient Stress. In: IEEE Transactions on Device and Materials Reliability, 20 (3). pp. 562-569.
Sinha, R and Bhattacharya, P and Sambandan, S and Shrivastava, M (2020) Nano-second timescale drain voltage induced electrical instabilities in hydrogenated amorphous silicon thin film transistors. In: Japanese Journal of Applied Physics, 59 (7).
Paul, M and Sampath Kumar, B and Gossner, H and Shrivastava, M (2020) Engineering Schemes for Bulk FinFET to Simultaneously Improve ESD/Latch-Up Behavior and Hot Carrier Reliability. In: IEEE Transactions on Electron Devices, 67 (7). pp. 2745-2751.
Kumar, BS and Paul, M and Gossner, H and Shrivastava, M (2020) Physical Insights into the ESD Behavior of Drain Extended FinFETs (DeFinFETs) and Unique Current Filament Dynamics. In: IEEE Transactions on Electron Devices, 67 (7). pp. 2717-2724.
Shankar, B and Soni, AG and Shrivastava, M (2020) Electro-thermo-mechanical reliability of recessed barrier AlGaN/GaN schottky diodes under pulse switching conditions. In: IEEE Transactions on Electron Devices, 67 (5). pp. 2044-2051.
Soni, A and Ajay, . and Shrivastava, M (2020) Novel Drain-Connected Field Plate GaN HEMT Designs for Improved VBD-RON Tradeoff and RF PA Performance. In: IEEE Transactions on Electron Devices, 67 (4). pp. 1718-1725.
Naclerio, AE and Zakharov, DN and Kumar, J and Rogers, B and Pint, CL and Shrivastava, M and Kidambi, PR (2020) Visualizing Oxidation Mechanisms in Few-Layered Black Phosphorus via in Situ Transmission Electron Microscopy. In: ACS Applied Materials and Interfaces, 12 (13). pp. 15844-15854.
Ansh, A and Shrivastava, M and Kumar, J and Sheoran, G and Variar, HB and Mishra, R and Kuruva, H and Meersha, A and Mishra, A and Raghavan, S (2020) Chalcogen-assisted enhanced atomic orbital interaction at TMD-metal interface and sulfur passivation for overall performance boost of 2-D TMD FETs. In: IEEE Transactions on Electron Devices, 67 (2). pp. 717-724.
Ansh, . and Kumar, J and Sheoran, G and Mishra, R and Raghavan, S and Shrivastava, M (2020) Selective Electron or Hole Conduction in Tungsten Diselenide (WSe2) Field-Effect Transistors by Sulfur-Assisted Metal-Induced Gap State Engineering. In: IEEE Transactions on Electron Devices, 67 (1). pp. 383-388.
Bhattacharya, P and Sinha, R and Thakur, BK and Parab, V and Shrivastava, M and Sambandan, S (2020) Adaptive Dielectric Thin Film Transistors-A Self-Configuring Device for Low Power Electrostatic Discharge Protection. In: IEEE Electron Device Letters, 41 (1). pp. 66-69.
Shankar, B and Raghavan, S and Shrivastava, M (2020) Distinct Failure Modes of AlGaN/GaN HEMTs under ESD Conditions. In: IEEE Transactions on Electron Devices, 67 (4). pp. 1567-1574.
Soni, A and Shrivastava, M (2019) Computational Modelling-Based Device Design for Improved mmWave Performance and Linearity of GaN HEMTs. In: IEEE Journal of the Electron Devices Society, 8 . pp. 33-41.
Shankar, B and Shrivastava, M (2019) Safe Operating Area of Polarization Super-junction GaN HEMTs and Diodes. In: IEEE Transactions on Electron Devices, 66 (10). pp. 4140-4147.
