Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN Buffer

Joshi, V and Gupta, SD and Chaudhuri, RR and Shrivastava, M (2023) Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN Buffer. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

PDF irps_2023.pdf - Published Version Restricted to Registered users only Download (754kB) | Request a copy

Abstract

Through this work, we report a unique reduction in the breakdown voltage of an AlGaN/GaN HEMT device when used in a cascode configuration. Detailed analysis reveals the breakdown voltage of the cascode HEMT to be a strong function of the carrier transport through the C-doped GaN buffer. A GaN buffer doping strategy is also proposed to improve the breakdown performance of the cascode HEMT device.

Item Type:	Conference Proceedings
Publication:	IEEE International Reliability Physics Symposium Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords:	Breakdown Voltage; C-doped GaN buffer; C-doped GaN buffer transport; C-Si co-doping; Cascode HEMTs
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	07 Jul 2023 11:07
Last Modified:	07 Jul 2023 11:07
URI:	https://eprints.iisc.ac.in/id/eprint/82115

Actions (login required)

View Item