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Role of Channel Inversion in Ambient Degradation of Phosphorene FETs

Kumar, J and Patbhaje, U and Shrivastava, M (2022) Role of Channel Inversion in Ambient Degradation of Phosphorene FETs. In: IEEE Transactions on Electron Devices, 69 (6). pp. 3353-3358.

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Official URL: https://doi.org/10.1109/TED.2022.3171504


Phosphorene is a potential material to replace silicon in next-generation electronic devices. However, the material is not favorable for device applications due to its gradual degradation when exposed to ambient environmental conditions. The degradation process is mainly initiated by oxygen molecules, which attacks the lone pair of phosphorus atoms. We show that in the case of phosphorene-based field-effect transistors (FETs), the channel degradation due to oxygen molecules is also influenced by the presence of channel inversion or excess (inversion) carriers. Our study reveals a unique reliability issue related to phosphorene FETs. Here, we investigate the role of channel excess holes (due to inversion) in the phosphorene degradation using the first-principles molecular dynamics computations and electrical and Raman characterization. The results show that phosphorene degrades faster under negative gate bias (excess hole) than pristine conditions (unbiased). The rapid degradation is mainly due to the enhanced chemical interaction of oxygen with the available hole in the channel. Using electrical and Raman characterization, the computational findings are experimentally verified over phosphorene FETs. The devices show a faster change in drain current and fast decay of Raman peaks in the ambient environment under negative gate bias compared to no gate bias condition. Therefore, phosphorene has an additional ambient reliability issue once exposed with negative biased during its FETs applications. © 1963-2012 IEEE.

Item Type: Journal Article
Publication: IEEE Transactions on Electron Devices
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords: Computation theory; Drain current; Electric potential; Field effect transistors; Molecular dynamics; Molecules; Oxygen; Phosphorus, Ambients; Channel inversion; Density functional theory; Density-functional-theory; Electrical characterization; Field-effect transistor; Gate bias; Phosphorene; Quantumatk; Raman., Density functional theory
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 21 Jun 2022 09:30
Last Modified: 21 Jun 2022 09:30
URI: https://eprints.iisc.ac.in/id/eprint/73918

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