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Gaps in the Y-Function Method for Contact Resistance Extraction in 2D Few-Layer Transition Metal Dichalcogenide Back-Gated FETs

Hemanjaneyulu, K and Kumar, J and Shrivastava, M (2022) Gaps in the Y-Function Method for Contact Resistance Extraction in 2D Few-Layer Transition Metal Dichalcogenide Back-Gated FETs. In: IEEE Electron Device Letters, 43 (4). pp. 635-638.

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Official URL: https://doi.org/10.1109/LED.2022.3149410


Y-Function method is often used for 2D TMD back-gated FETs, attributed to its simplicity and the lithographic challenges in processing transfer length method (TLM) test structures over 2D TMD flakes. While the contact resistance extracted from the Y-Function method was shown to be comparable to the TLM method in an early work, its applicability was never tested rigorously for the entire experimental range of 2D TMD FETs. This work presents the limitations and failure conditions of the Y-Function method when used for extracting contact resistance in back-gated, few-layer TMD FETs. We have found that the Y-Function method does not apply to the entire experimental range, such as ohmic/Schottky barrier, source-drain electric field, contact resistance, etc., particularly for the layered material-based FETs. The influence of the Schottky barrier and drain bias is investigated thoroughly for four different 2D materials (MoS2, MoSe2, WS2 and WSe2). The experimental findings are then used to narrow down extraction window/conditions for the Y-Function method, which gives contact resistance estimation closer to TLM based approach for few-layer, back-gated TMD FETs.

Item Type: Journal Article
Publication: IEEE Electron Device Letters
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords: Contact resistance; Electric field effects; Extraction; Field effect transistors; Iron; Layered semiconductors; Molybdenum compounds; Schottky barrier diodes; Selenium compounds; Tungsten compounds, Contact resistance extraction; Field-effect transistor; Function methods; Resistance; Schottky barriers; Test-structure; TMD; Transfer length methods; Transition metal dichalcogenides (TMD); Y-function method, Threshold voltage
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 24 Jun 2022 12:08
Last Modified: 24 Jun 2022 12:08
URI: https://eprints.iisc.ac.in/id/eprint/73714

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