Inverted SOA and Transient Non-Linearity of LDMOS Devices With RESURF-Implant

Mishra, A and Boeila, SK and Singh, AK and Gupta, S and Singh, SK and Monishmurali, M and Gupta, A and Shrivastava, M (2022) Inverted SOA and Transient Non-Linearity of LDMOS Devices With RESURF-Implant. In: 2022 IEEE International Conference on Emerging Electronics, 11 - 14 December 2022, Bangalore, India.

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Abstract

Reduced surface field (RESURF) technique in the laterally double-diffused MOS (LDMOS) devices offers a promising solution of high voltage alternative over conventional LDMOS devices with improved figure of merits. This paper addresses the safe operating area (SOA) concerns and ON-state breakdown driven limitations of RESURF technique, highlighting the inverted SOA behavior. Using electrothermal simulations on TCAD tool, this work also investigates the influence of RESURF-implant on the lattice heating in the LDMOS devices.

Item Type:	Conference Paper
Publication:	2022 IEEE International Conference on Emerging Electronics, ICEE 2022
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the IEEE.
Keywords:	lattice heating; LDMOS; ON-state breakdown; RESURF; SOA
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	30 Jun 2023 05:04
Last Modified:	30 Jun 2023 05:04
URI:	https://eprints.iisc.ac.in/id/eprint/82149

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