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Trap assisted stress induced ESD reliability of GaN schottky diodes

Shankar, B and Singh, R and Sengupta, R and Khand, H and Soni, A and Gupta, SD and Raghavan, S and Gossner, H and Shrivastava, M (2018) Trap assisted stress induced ESD reliability of GaN schottky diodes. In: 40th Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2018, 23 - 28 September 2018, Reno.

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Official URL: https://doi.org/10.23919/EOS/ESD.2018.8509745


Electro-thermal behaviour and degradation of recessed GaN Schottky diode are studied under forward and reverse ESD stress. Impact of different surface treatments at Schottky interface, on trap generation and degradation is investigated. Evolution of mechanical stress and defects is probed using onthe- fly Raman spectroscopy. Distinct failure modes are discovered in each case.

Item Type: Conference Paper
Publication: Electrical Overstress/Electrostatic Discharge Symposium Proceedings
Publisher: ESD Association
Additional Information: The copyright for this article belongs to the ESD Association.
Keywords: Electrostatic devices; III-V semiconductors; Schottky barrier diodes, ESD stress; Mechanical stress; On-the-fly; Schottky; Schottky diodes; Stress-induced; Thermal behaviours; Trap generation, Gallium nitride
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 03 Aug 2022 06:22
Last Modified: 03 Aug 2022 06:22
URI: https://eprints.iisc.ac.in/id/eprint/75195

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