Exploring the Feasibility of AlN/GaN HEMTs for THz Applications Using a Novel Device-Circuit Co-Design Approach

Variar, HB and Singh, A and Soni, A and Shrivastava, M (2022) Exploring the Feasibility of AlN/GaN HEMTs for THz Applications Using a Novel Device-Circuit Co-Design Approach. In: 2022 IEEE International Conference on Emerging Electronics, 11- 14 Dec 2022, Bangalore.

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Abstract

This work presents a rigorous device-circuit co-design investigation of AlN/GaN HEMT to explore its feasibility for operations at frequencies 1 THz. A novel device-circuit co-design methodology was adopted, which involves I-V/C-V/S-parameter matching, careful extraction of a small signal model and large-signal model. This was followed by source-load pull-based power amplifier (PA) design/exploration as a function of various device design parameters. For PA operation, both class-A and class-AB operations were invested while exploring PA gain, output power, efficiency at 1dB compression point, and linearity through dual-tone (IMD3) investigations. A complete range of device design parameters are evaluated to explore the ultimate scalability limit of AlN/GaN HEMT for possible THz operation. A correlation between the device's intrinsic parameters and PA performance has also been established to uncover AlN/GaN HEMT's feasibility for 1 THz active operation.

Item Type:	Conference Paper
Publication:	2022 IEEE International Conference on Emerging Electronics, ICEE 2022
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	AlN/GaN HEMT; mmWave; THz
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	28 Jun 2023 05:20
Last Modified:	28 Jun 2023 05:20
URI:	https://eprints.iisc.ac.in/id/eprint/82189

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