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On the Root Cause of Dynamic on Resistance Behavior in AlGaN/GaN HEMTs

Gupta, SD and Joshi, V and Chaudhuri, RR and Kr Singh, A and Guha, S and Shrivastava, M (2020) On the Root Cause of Dynamic on Resistance Behavior in AlGaN/GaN HEMTs. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA.

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Official URL: https://dx.doi.org/10.1109/IRPS45951.2020.9128226


Channel field and stress time dependent critical voltage in dynamic ON resistance of GaN HEMTs is reported for the first time. Electro-Photo Luminescence, low temperature stress experiments and their dependence on device parameters is correlated to propose a novel channel field and buffer trap interaction mechanism regulating the critical voltage which is not related to new trap generation or hot electrons. © 2020 IEEE.

Item Type: Conference Paper
Publication: IEEE International Reliability Physics Symposium Proceedings
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: cited By 0; Conference of 2020 IEEE International Reliability Physics Symposium, IRPS 2020 ; Conference Date: 28 April 2020 Through 30 May 2020; Conference Code:161550
Keywords: Aluminum gallium nitride; Gallium nitride; III-V semiconductors; Temperature, AlGaN/GaN HEMTs; Critical voltages; Device parameters; Interaction mechanisms; Low temperatures; On-resistance; Stress time; Trap generation, Dynamics
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 13 Oct 2020 11:28
Last Modified: 13 Oct 2020 11:28
URI: http://eprints.iisc.ac.in/id/eprint/66177

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