3D Approaches to Engineer Holding Voltage of SCR

Gautam, SK and Variar, HB and Luo, J and Shi, N and Marreiro, D and Mallikarjunaswamy, S and Shrivastava, M (2023) 3D Approaches to Engineer Holding Voltage of SCR. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

PDF irps_2023.pdf - Published Version Restricted to Registered users only Download (862kB) | Request a copy

Abstract

Novel Silicon-Controlled-Rectifier (SCR) structures are experimentally demonstrated with the cathode and anode region engineering in the width (3D) plane. The engineering approach uses unique placements of P+ and N+ pockets/strips, instead of uniform anode/cathode implants. Experimental results show tunable holding voltages (3V - 10V) with high ESD failure current (It2) by using layout parameters related to the placement of these pockets/strips. The same has been demonstrated for over a dozen process lots. The physical insights and engineering guidelines into the holding voltage tuning has been explored using 3D process and device TCAD.

Item Type:	Conference Paper
Publication:	IEEE International Reliability Physics Symposium Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords:	Binary alloys, 3D planes; 3D process; Anode cathodes; Cathode and anode; Engineering guidelines; Failure currents; Holding voltage; Tunables; Voltage tuning, Anodes
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	07 Jul 2023 10:38
Last Modified:	07 Jul 2023 10:38
URI:	https://eprints.iisc.ac.in/id/eprint/82112

Actions (login required)

View Item