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3D Approaches to Engineer Holding Voltage of SCR

Gautam, SK and Variar, HB and Luo, J and Shi, N and Marreiro, D and Mallikarjunaswamy, S and Shrivastava, M (2023) 3D Approaches to Engineer Holding Voltage of SCR. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

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Official URL: https://doi.org/10.1109/IRPS48203.2023.10118282


Novel Silicon-Controlled-Rectifier (SCR) structures are experimentally demonstrated with the cathode and anode region engineering in the width (3D) plane. The engineering approach uses unique placements of P+ and N+ pockets/strips, instead of uniform anode/cathode implants. Experimental results show tunable holding voltages (3V - 10V) with high ESD failure current (It2) by using layout parameters related to the placement of these pockets/strips. The same has been demonstrated for over a dozen process lots. The physical insights and engineering guidelines into the holding voltage tuning has been explored using 3D process and device TCAD.

Item Type: Conference Paper
Publication: IEEE International Reliability Physics Symposium Proceedings
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords: Binary alloys, 3D planes; 3D process; Anode cathodes; Cathode and anode; Engineering guidelines; Failure currents; Holding voltage; Tunables; Voltage tuning, Anodes
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 07 Jul 2023 10:38
Last Modified: 07 Jul 2023 10:38
URI: https://eprints.iisc.ac.in/id/eprint/82112

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