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First Demonstration and Physical Insights into Time-Dependent Breakdown of Graphene Channel and Interconnects

Mishra, A and Meersha, A and Kranthi, NK and Trivedi, K and Variar, HB and Veenadhari Bellamkonda, NS and Raghavan, S and Shrivastava, M (2019) First Demonstration and Physical Insights into Time-Dependent Breakdown of Graphene Channel and Interconnects. In: 2019 IEEE International Reliability Physics Symposium, IRPS 2019, 31 March 2019 - 4 April 2019, Monterey.

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Official URL: https://doi.org/10.1109/IRPS.2019.8720452


A prolonged operation of Graphene FET and interconnects mandate the assessment of temporal evolution of degradation of the material. Contrary to bulk semiconductors, which break only above a critical field, the time-dependent degradation and consequent failure of graphene has been discovered, which precludes the existence of failure threshold and manifests as a potential defect-assisted aging issue for graphene and other 2D material-based devices. Unlike catastrophic failures, which are triggered during redistribution of excess energy, the role of reaction kinetics (time) in inflicting defect-by -defect damage to graphene channel is revealed. Time-evolution of defects in graphene channel while exploring possible pathways through which heat dissipates across the device has been studied on-the-fly using an integrated micro-Raman setup. The role of metal-graphene interface and the substrate in removing excess heat from graphene channel is discussed, while emphasizing the need for sp-hybridized carbon atoms at metal-graphene interface for reliable, long-term operation of graphene-based devices.

Item Type: Conference Paper
Publication: IEEE International Reliability Physics Symposium Proceedings
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords: Aging of materials; Defects; Graphene; Reaction kinetics, Bulk semiconductors; Catastrophic failures; Degradation of the material; Failure thresholds; Potential defects; Temporal evolution; Time dependent failure; Time evolutions, Graphene devices
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 27 Dec 2022 04:56
Last Modified: 27 Dec 2022 04:56
URI: https://eprints.iisc.ac.in/id/eprint/78564

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