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A Novel High Voltage Drain Extended FinFET SCR for SoC Applications

Monishmurali, M and Shrivastava, M (2021) A Novel High Voltage Drain Extended FinFET SCR for SoC Applications. In: 2021 IEEE International Reliability Physics Symposium, IRPS 2021, 21-24 Mar 2021, Monterey, Virtual.

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Official URL: https://doi.org/10.1109/IRPS46558.2021.9405194


In this work, physical insights into missing SCR action in High Voltage drain extended FinFET SCR is developed using detailed 3D TCAD simulations. The 3D TCAD simulations revealed that the missing SCR action in STI-DeFinFET SCR is due to the weak bipolar strength associated with the PNP corresponding to the anode (P+) contact. A novel Dual-Fin STI DeFinFET SCR architecture is revealed to address this roadblock and achieve SCR action in these devices, which offered a failure threshold 3X times higher than the conventional device. Furthermore, to investigate the filament behavior, a 64-Fin Dual-Fin STI DeFinFET SCR is simulated, revealing severe filament driven low current failure in these devices. Silicide blocking and well-implant engineering were found to improve power scalability issues in these devices. © 2021 IEEE.

Item Type: Conference Paper
Publication: IEEE International Reliability Physics Symposium Proceedings
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords: Electronic design automation; Fins (heat exchange); Outages; Silicides; System-on-chip, Failure thresholds; High voltage; Low currents; Power scalability; SOC application; TCAD simulation, FinFET
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 04 Aug 2021 06:55
Last Modified: 04 Aug 2021 06:55
URI: http://eprints.iisc.ac.in/id/eprint/68946

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