How to Achieve Moving Current Filament in High Voltage LDMOS Devices: Physical Insights Design Guidelines for Self-Protected Concepts

Kranthi, NK and Garg, C and Kumar, BS and Salman, A and Boselli, G and Shrivastava, M (2020) How to Achieve Moving Current Filament in High Voltage LDMOS Devices: Physical Insights Design Guidelines for Self-Protected Concepts. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA, USA.

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Abstract

New design approach for improving ESD robustness of High voltage LDMOS devices is presented using detailed 3D TCAD simulations by developing physical insights and engineering approaches for moving filaments. (i) NPN turn-on engineering by using an optimum P-well profile substrate biasing and (ii) filament width engineering by using optimum drain diffusion length (DL), shows how static filament can be modified to achieve dynamic (moving) nature. This approach resulted in 10� improvement in ESD robustness for self-protecting concepts. © 2020 IEEE.

Item Type:	Conference Paper
Publication:	IEEE International Reliability Physics Symposium Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	cited By 0; Conference of 2020 IEEE International Reliability Physics Symposium, IRPS 2020 ; Conference Date: 28 April 2020 Through 30 May 2020; Conference Code:161550
Keywords:	Electrostatic devices; MOS devices; Surge protection, Design approaches; Diffusion length; ESD robustness; Filament widths; Moving current filament; Self protecting; Substrate biasing; TCAD simulation, Electrostatic discharge
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	24 Nov 2020 10:06
Last Modified:	24 Nov 2020 10:06
URI:	http://eprints.iisc.ac.in/id/eprint/66179

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