On the ESD behavior of hydrogenated amorphous silicon based high-voltage TFTs

Sinha, R and Sambandan, S and Shrivastava, M (2022) On the ESD behavior of hydrogenated amorphous silicon based high-voltage TFTs. In: 2022 IEEE International Conference on Emerging Electronics,, 11- 14 Dec 2022, Bangalore.

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Abstract

In this paper, we present detailed physical insights into the electrostatic discharge (ESD) behavior of high-voltage amorphous silicon (a-Si:H) thin-film transistors (TFTs). Device architecture which provides a 4-5x times improvement in ESD robustness with the same spatial considerations is discussed. The physics behind the improvement in ESD robustness is explored, and technological parameters' impact on ESD behavior is studied. Transmission line pulse (TLP) characteristics are discussed, and the failure behavior is explored. © 2022 IEEE.

Item Type:	Conference Paper
Publication:	2022 IEEE International Conference on Emerging Electronics, ICEE 2022
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology) Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	28 Jun 2023 05:19
Last Modified:	28 Jun 2023 05:19
URI:	https://eprints.iisc.ac.in/id/eprint/82188

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