The Physical Insight into Holding Voltage Engineering of SCR for ESD Protection

Gautam, SK and Jatin, J and Monishmurali, M and Shrivastava, M (2022) The Physical Insight into Holding Voltage Engineering of SCR for ESD Protection. In: 2022 IEEE International Conference on Emerging Electronics, 11 - 14 Dec 2022, Bangalore.

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Abstract

In this work, the holding voltage characteristics of Silicon-Controlled-Rectifier (SCR) with different cathode structures are studied and compared. The cathode structures include the different W/L ratios and the gap between the P+ and N+ diffusion layers (pocket implants) in the cathode Pwell region. These devices show tunable high holding voltage and improved failure current (It2), which strongly depends on the W/L ratio of P+ and N+ diffusion layers. The uniform carrier current distribution in the cathode allows tuning holding voltage with W/L > 1 without affecting the other TLP characteristics like breakdown voltage, trigger voltage, depth of snap back, and holding current. With a higher W/L ratio> 1, the failure current can be improved significantly by 30%. Hence, this work provides physical insights into the holding voltage and failure current engineering in high holding voltage (HHV) SCRs, which offers a robust design for Electrostatic Discharge (ESD) protection

Item Type:	Conference Paper
Publication:	2022 IEEE International Conference on Emerging Electronics, ICEE 2022
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Electrostatic Discharge (ESD); Silicon-Controlled-Rectifier (SCR); Transmission Line Pulse (TLP)
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	28 Jun 2023 06:05
Last Modified:	28 Jun 2023 06:05
URI:	https://eprints.iisc.ac.in/id/eprint/82192

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