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First Insights into Electro-Thermal Stress Driven Time-Dependent Permanent Degradation Failure of CVD Monolayer MoS2 Channel

Ansh, A and Sheoran, G and Kumar, J and Shrivastava, M (2020) First Insights into Electro-Thermal Stress Driven Time-Dependent Permanent Degradation Failure of CVD Monolayer MoS2 Channel. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA.

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Official URL: https://dx.doi.org/10.1109/IRPS45951.2020.9129173


This work reports, for the first time, time dependent degradation and failure of CVD monolayer MoS2 based field-effect transistor channel under DC voltage stress, which seem to have originated from its unique molecular description. Degradation was found to be permanent, which takes place at fields lower than critical field for breakdown and have been discovered to be a strong function of channel temperature and e-field. Strong dependence of channel current on self-heating across the channel has also been observed, which resulted in significant drop in channel current under stress, which however recovers when stress was removed. Reversal in degradation trends and permanent channel failure was observed at lower (77-150K) channel temperatures. Unique localized low resistance regions as well as field assisted physical damage result in overall (ON and OFF state) performance degradation of MoS2 transistors. Micro-Raman and Photoluminescence investigations, as a function of stress time, are performed to investigate the micro-origin of permanent degradation and failure. © 2020 IEEE.

Item Type: Conference Paper
Publication: IEEE International Reliability Physics Symposium Proceedings
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: cited By 0; Conference of 2020 IEEE International Reliability Physics Symposium, IRPS 2020 ; Conference Date: 28 April 2020 Through 30 May 2020; Conference Code:161550
Keywords: Field effect transistors; Layered semiconductors; Molybdenum compounds, Channel temperature; Degradation failure; Degradation trend; Electro-thermal stress; Molecular descriptions; Performance degradation; Photoluminescence investigation; Strong dependences, Monolayers
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 15 Oct 2020 06:03
Last Modified: 15 Oct 2020 06:03
URI: http://eprints.iisc.ac.in/id/eprint/66178

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