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Defect Assisted Metal-TMDs Interface Engineering: A First Principle Insight

Kumar, J and Ansh, A and Kuruva, H and Shrivastava, M (2020) Defect Assisted Metal-TMDs Interface Engineering: A First Principle Insight. In: Device Research Conference - Conference Digest, DRC, 21-24 June 2020, Columbus; United States.

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Official URL: https://dx.doi.org/10.1109/DRC50226.2020.9135158


2D materials make the scientific land more fertile to harvest future generation of high-performance electronic devices. Among these, TMDs are more promising for switching applications due to its band gap and stability over Graphene and Phosphorene respectively. Despite of these properties, performance of the TMDs FET is not achieved to its expectation yet due to high contact resistance at the metal-TMDs interfaces. Different metal-TMDs interfaces have been explored for contact resistance reduction 1 , 2 , 3 but, a systematic study of metal induced gap states MIGS for TMDs and corresponding engineering to improve the contact resistance is missing yet. To explore the gap, we have done systematic study of interaction of different metals ( Au, Cr, Ni and Pd ) with MoS 2 , MoSe 2 , WS 2 and WSe 2 followed by impact of chalcogen vacancy on corresponding interactions using Density Functional Theory (DFT). Chalcogen vacancy reduces all the metal-TMDs bond distance which can reduce corresponding contact resistance due to reduction in the tunneling barrier width. Defect engineering also converts intrinsic n-type Pd-TMDs contacts into p-type which can help in MoS 2 based CMOS circuit in future. © 2020 IEEE.

Item Type: Conference Paper
Publication: Device Research Conference - Conference Digest, DRC
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: Copyright for this article belongs to the IEEE.
Keywords: Chromium compounds; Contact resistance; Defects; Density functional theory; Energy gap; Gold compounds; Interface states; Selenium compounds, Defect engineering; Electronic device; Future generations; Interface engineering; Metal-induced gap state; Resistance reduction; Switching applications; Tunneling barrier, Metals
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 14 Mar 2021 06:36
Last Modified: 14 Mar 2021 06:36
URI: http://eprints.iisc.ac.in/id/eprint/66768

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