Time Dependent Early breakdown of AIGaN/GaN Epi Stacks and Shift in SOA Boundary of HEMTs under Fast Cyclic Transient Stress

Shankar, B and Soni, A and Dutta Gupta, S and Shikha, S and Singh, S and Raghavan, S and Shrivastava, M (2019) Time Dependent Early breakdown of AIGaN/GaN Epi Stacks and Shift in SOA Boundary of HEMTs under Fast Cyclic Transient Stress. In: 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, 1 December 2018- 5 December 2018, San Francisco, 34.6.1-34.6.4.

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Abstract

This experimental study reports first observations of (i) SOA boundary shift in GaN HEMTs and (ii) early time to fail of vertical AIGaN/GaN Epi stack under fast changing (sub-10ns risetime) cyclic transient stress conditions for a 600V qualified commercial grade HEMT stack. It is shown that a stack qualified for 10 years lifetime under DC stress, fails faster under cyclic transient stress. Integrated electrical and mechanical stress characterization routine involving Raman/PL mapping and CL spectroscopy reveals material limited unique failure physics under transient stress condition. Failure analysis using cross-sectional TEM investigations reveal signature of different degradation and failure mechanism under transient and DC stress conditions. A failure model is proposed for failure under cyclic transient stress.

Item Type:	Conference Paper
Publication:	Technical Digest - International Electron Devices Meeting, IEDM
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Failure (mechanical); Gallium nitride; High electron mobility transistors; III-V semiconductors, Boundary shifts; Commercial grade; Cross-sectional TEM; Cyclic transients; Failure mechanism; Failure physics; Mechanical stress; Transient stress, Stresses
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	28 Nov 2022 09:44
Last Modified:	28 Nov 2022 09:44
URI:	https://eprints.iisc.ac.in/id/eprint/78087

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