Physical Insights into the ESD Behavior of Drain Extended FinFETs (DeFinFETs) and Unique Current Filament Dynamics

Kumar, BS and Paul, M and Gossner, H and Shrivastava, M (2020) Physical Insights into the ESD Behavior of Drain Extended FinFETs (DeFinFETs) and Unique Current Filament Dynamics. In: IEEE Transactions on Electron Devices, 67 (7). pp. 2717-2724.

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Abstract

Single and multi-Fin behavior of drain-extended FinFET (DeFinFET) devices under low and high current injection conditions is studied using detailed 3-D TCAD simulations. For completeness, electrostatic discharge (ESD) behavior of both shallow trench isolation (STI)-type and non-STI-type DeFinFET devices is studied. Under low current injection, junction breakdown, parasitic bipolar turn-on, as well as the onset of space charge modulation and its implications on high current behavior are explored. Under high current injection, the role of space charge modulation in electrothermal instability and filament formation is discussed. Unique filament spreading behavior has been discovered in DeFinFETs. Fin-based construction was found responsible for filament spreading. The interplay among bipolar turn-on, bipolar efficiency, filament density, and nature of filament spreading is explained.

Item Type:	Journal Article
Publication:	IEEE Transactions on Electron Devices
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Drain current; Electrostatic devices; FinFET; Fins (heat exchange); Modulation, Charge modulation; Current filaments; Electrothermal instability; Filament formation; High current behavior; High currents; Shallow trench isolation; TCAD simulation, Electrostatic discharge
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	06 Feb 2023 06:35
Last Modified:	06 Feb 2023 06:35
URI:	https://eprints.iisc.ac.in/id/eprint/79854

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