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Physical insights into the ESD behavior of drain extended FinFETs

Kumar, BS and Paul, M and Gossner, H and Shrivastava, M (2018) Physical insights into the ESD behavior of drain extended FinFETs. In: 40th Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2018, 23 - 28 September 2018, Reno.

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Official URL: https://doi.org/10.23919/EOS/ESD.2018.8509695


In this paper, physical insights of Drain extended FinFET under ESD stress condition is explored. Key features like bipolar triggering, conductivity modulation and localized hot spot formation pertaining to DeFinFET failure mechanism are discussed comprehensively. Non-uniformity and filament formation in multi-finger DeFinFET is explored. © 2018 ESD Association.

Item Type: Conference Paper
Publication: Electrical Overstress/Electrostatic Discharge Symposium Proceedings
Publisher: ESD Association
Additional Information: The copyright for this article belongs to the ESD Association.
Keywords: Electrostatic devices; Failure (mechanical), Conductivity modulation; ESD stress; Failure mechanism; Filament formation; Hot spot; Key feature; Multi fingers; Non-uniformities, FinFET
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 03 Aug 2022 06:17
Last Modified: 03 Aug 2022 06:17
URI: https://eprints.iisc.ac.in/id/eprint/75194

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