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Physical Insights into Phosphorene Transistor Degradation under Exposure to Atmospheric Conditions and Electrical Stress

Kumar, J and Ansh, K and Yadav, A and Singh, A and Naclerio, A and Zakharov, D and Kidambi, P and Shrivastava, M (2020) Physical Insights into Phosphorene Transistor Degradation under Exposure to Atmospheric Conditions and Electrical Stress. In: 2020 IEEE International Reliability Physics Symposium, IRPS 2020, 28 April-30 May, 2020, Virtual, Online; United States.

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Official URL: https://dx.doi.org/10.1109/IRPS45951.2020.9129123


In spite of promising properties like high mobility, tunable band gap, etc. Phosphorene's promise to be a beyond CMOS material is hindered by its instability and fast degradation when exposed to ambient conditions. In this work, we performed a systematic study of Phosphorene degradation, under different influencing parameters, using detailed atomistic (DFT) computations and electrical, optical (Raman and PL) as well as physical (high resolution TEM) experiments. We observed that O2 dominates over other gases to degrade phosphorene. O2 is adsorbed chemically and dissociates over Phosphorene while other gases like, Ar, CO2, H2O and N2, have physical adsorption over it with weak van der Waals (vdW) interactions. The degradation rate is anisotropic with maximum and minimum along 001 and 010 planes, respectively. Gate bias plays a significant role in Phosphorene FET instability. The degradation is enhanced under positive gate bias due to enhanced oxidation by gate field induced electron in the FET channel. The degradation however was found to be missing when channel was populated with holes under negative gate bias. © 2020 IEEE.

Item Type: Conference Paper
Publication: IEEE International Reliability Physics Symposium Proceedings
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: cited By 0; Conference of 2020 IEEE International Reliability Physics Symposium, IRPS 2020 ; Conference Date: 28 April 2020 Through 30 May 2020; Conference Code:161550
Keywords: Degradation; Van der Waals forces, Ambient conditions; Atmospheric conditions; High-resolution TEM; Influencing parameters; Physical adsorption; Positive gate bias; Transistor degradation; Van der Waals interaction, Energy gap
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 04 Nov 2020 11:50
Last Modified: 04 Nov 2020 11:50
URI: http://eprints.iisc.ac.in/id/eprint/66181

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