Physical Insights into the DC and Transient Reverse Bias Reliability of β-Ga2O3Based Vertical Schottky Barrier Diodes

Raj, H and Joshi, V and Chaudhuri, RR and Malik, RR and Shrivastava, M (2023) Physical Insights into the DC and Transient Reverse Bias Reliability of β-Ga2O3Based Vertical Schottky Barrier Diodes. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

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Abstract

In this work, we report time-dependent breakdown of vertical β-Ga2O3 Schottky barrier diodes (SBDs), even when stressed at voltages lower than the OFF -state breakdown voltage. Computational analysis revealed the process to be related to trapping induced field modulation. Further, novel anode contact scheme consisting of multiple field-plates and Schottky contact openings is proposed to mitigate this issue. The device structure thus fabricated demonstrated improved DC as well as transient reliability.

Item Type:	Conference Paper
Publication:	IEEE International Reliability Physics Symposium Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords:	field-plated diodes; reverse-bias reliability; β-Ga2O3
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	07 Jul 2023 10:40
Last Modified:	07 Jul 2023 10:40
URI:	https://eprints.iisc.ac.in/id/eprint/82113

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