On the ESD behavior of a-Si:H based diode-connected thin- film transistors

Sinha, R and Sambandan, S and Shrivastava, M (2022) On the ESD behavior of a-Si:H based diode-connected thin- film transistors. In: 2022 IEEE International Conference on Emerging Electronics, 11- 14 Dec 2022, Bangalore.

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Abstract

This work presents physical insights into the operation and ESD behavior of a-Si:H based diode-connected thin-film transistors. The device operation is studied through DC I-V characterization and the device leakage under normal conditions are explored. The ESD behavior is then explored and a three-stage device behavior is observed. It is observed that the device fails due to electric field lead thermal breakdown. The impact of pulse width and channel dimensions are studied. Finally, the device behavior under negative ESD stress is studied and it is found that application of negative ESD stress presents a delayed turn- on behavior owing to depletion of charge carriers under negative gate bias.

Item Type:	Conference Paper
Publication:	2022 IEEE International Conference on Emerging Electronics, ICEE 2022
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology) Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	28 Jun 2023 05:04
Last Modified:	28 Jun 2023 05:04
URI:	https://eprints.iisc.ac.in/id/eprint/82180

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