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Nano-second timescale drain voltage induced electrical instabilities in hydrogenated amorphous silicon thin film transistors

Sinha, R and Bhattacharya, P and Sambandan, S and Shrivastava, M (2020) Nano-second timescale drain voltage induced electrical instabilities in hydrogenated amorphous silicon thin film transistors. In: Japanese Journal of Applied Physics, 59 (7).

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Official URL: https://dx.doi.org/10.35848/1347-4065/ab9ef5


In this work, we study the device degradation of a-Si:H thin film transistors upon application of high frequency nano-second timescale pulse stress on the drain contact. Degradation mechanisms at different field stress levels have been investigated using real-time current-voltage, capacitance-voltage and Raman spectroscopy measurements. A positive V T shift under moderate electric field stress followed by a V T recovery (negative shift) at high drain fields has been observed. Spatial variance in the degradation has been studied. A variance in the degradation mechanism from the hot to cold contact is observed. No material changes are observed, confirmed through Raman spectroscopy as the field stress is applied. The role of self-heating in degradation is studied by varying the pulse width of the field stress in nano-seconds range. Finally, the impact of thermal and gate bias anneal on V T shift has been investigated through electrical measurements in a recursive stress-anneal cycle. © 2020 The Japan Society of Applied Physics.

Item Type: Journal Article
Publication: Japanese Journal of Applied Physics
Publisher: Institute of Physics Publishing
Additional Information: The copyright of this article belongs to Institute of Physics Publishing
Keywords: Amorphous silicon; Capacitance; Degradation; Electric fields; Raman spectroscopy; Thin film transistors; Thin films, A-Si:H thin film transistor; Capacitance voltage; Degradation mechanism; Electric field stress; Electrical instability; Electrical measurement; Hydrogenated amorphous silicon thin films; Raman spectroscopy measurements, Thin film circuits
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 28 Aug 2020 07:19
Last Modified: 28 Aug 2020 07:19
URI: http://eprints.iisc.ac.in/id/eprint/66258

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