Performance and Reliability Co-Design of HV devices in Vertically Stacked Nanosheet Technology

Jatin, J and Monishmurali, M and Gautam, SK and Shrivastava, M (2022) Performance and Reliability Co-Design of HV devices in Vertically Stacked Nanosheet Technology. In: 2022 IEEE International Conference on Emerging Electronics,, 11- 14 Dec 2022, Bangalore.

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Abstract

In this work, for the first time, Drain-Extended vertically stacked Nanosheet-based HV device has been studied in the context of System-On-Chip (SoC) integration. Physical insights into the device performance and ESD reliability are elaborated using 3D TCAD process simulations. Finally, the performance and reliability co-design guidelines related to HV devices in Nanosheets technology have been discussed comprehensively.

Item Type:	Conference Paper
Publication:	2022 IEEE International Conference on Emerging Electronics, ICEE 2022
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Drain-Extended; Electrostatic Discharge Reliability; GAA; Nanosheets; TCAD
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	28 Jun 2023 05:18
Last Modified:	28 Jun 2023 05:18
URI:	https://eprints.iisc.ac.in/id/eprint/82186

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