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Engineering Custom TLP I-V Characteristic Using a SCR-Diode Series ESD Protection Concept

Variar, HB and Gautam, SK and Kumar, A and Amogh, KM and Luo, J and Shi, N and Marreiro, D and Mallikarjunaswamy, S and Shrivastava, M (2023) Engineering Custom TLP I-V Characteristic Using a SCR-Diode Series ESD Protection Concept. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

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Official URL: https://doi.org/10.1109/IRPS48203.2023.10118220

Abstract

This work demonstrates an SCR-Diode series ESD Protection concept, which can be engineered to provide a custom TLP I-V characteristic. SCRs and diodes with dimensional variations have been used in different combinations and width ratios, which results in a range of TLP I-V characteristics. This protection circuit comes with several advantages as adaptability for various ESD protection windows, the benefits of using SCR as a protection device and the ease of designing the circuit. Along with TCAD studies, experimental data demonstrates that N-well and P-well doping of SCR can be used to further tune the Vhold and Ron of the protection circuit.

Item Type: Conference Paper
Publication: IEEE International Reliability Physics Symposium Proceedings
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords: ESD; ESD Protection concept; SCR; TLP
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 07 Jul 2023 10:55
Last Modified: 07 Jul 2023 10:55
URI: https://eprints.iisc.ac.in/id/eprint/82117

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