OFF State Reliability Challenges of Monolayer WS2FET Photodetector: Impact on the Dark and Photo-Illuminated State

Verma, R and Patbhaje, U and Kumar, J and Rai, AK and Shrivastava, M (2023) OFF State Reliability Challenges of Monolayer WS2FET Photodetector: Impact on the Dark and Photo-Illuminated State. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

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Abstract

This work reports the hot-hole injection-originated instability in the electrical characteristics (or the photodetection performance) of a monolayer WS2 Field Effect Transistor (FET) photodetector. When a reverse bias (i.e., OFF-state bias or negative gate voltage) temporal stress with a lateral electric field is applied under visible light illumination, the photocurrent is found to vary with time by up to 1 to 2 orders of magnitude. Instability in the dark current is also observed post the stress under illumination, which is reflected in the variation in the transfer and the output characteristics of the FET. The observations impose severe limitations on the reverse-biased back-gated FET for sensitive photodetection applications using transparent single-layer WS2 as the photoactive material.

Item Type:	Conference Paper
Publication:	IEEE International Reliability Physics Symposium Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords:	monolayer WS2; MSM photodiode; photodetection; reverse bias
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	07 Jul 2023 16:15
Last Modified:	07 Jul 2023 16:15
URI:	https://eprints.iisc.ac.in/id/eprint/82105

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