Selective Electron or Hole Conduction in Tungsten Diselenide (WSe2) Field-Effect Transistors by Sulfur-Assisted Metal-Induced Gap State Engineering

Ansh, . and Kumar, J and Sheoran, G and Mishra, R and Raghavan, S and Shrivastava, M (2020) Selective Electron or Hole Conduction in Tungsten Diselenide (WSe2) Field-Effect Transistors by Sulfur-Assisted Metal-Induced Gap State Engineering. In: IEEE Transactions on Electron Devices, 67 (1). pp. 383-388.

PDF ieee_tra_ele_dev_67-1__383 - 388_2020.pdf - Published Version Restricted to Registered users only Download (4MB) | Request a copy

Abstract

For semiconductor industry to replace silicon CMOS integrated circuits by 2-D semiconductors or transition metal dichalcogenides (TMDs), TMD-based n-FETs as well as p-FETs having performance better than Si FETs are a must. While a lot of literature demonstrates n-channel characteristics, the major roadblocks in the realization of TMD-based CMOS integrated circuit are the lack of approach to realize p-channel transistors having performance comparable to n-channel transistors, all realized over the same TMD substrate. To address this, we propose a new technique by engineering WSe2/metal interface to realize WSe2-based high-performance p-and n-channel transistors and therefore unveil its potential toward CMOS-integrated technology. The technique involves a dry process, based on the chemistry between the sulfur atom and WSe2 surface, that induces unique metal-induced gap states in the source/drain (S/D) contact area, which causes improved hole (electron) injection when Cr (Ni) as S/D metal was used. This has enabled the controlled realization of high-performance WSe2 FETs with desired polarity (N, P, or ambipolar), which solely depends on the contact metal used and contact engineering (CE)/surface engineering. Fundamental investigations on the effect of the proposed CE on metal-WSe2 interface revealed interesting and counter-intuitive facts, which very well corroborate with experimental observations.

Item Type:	Journal Article
Publication:	IEEE Transactions on Electron Devices
Publisher:	IEEE
Additional Information:	Copyright of this article belongs to IEEE
Keywords:	CMOS integrated circuits; Dielectric materials; Selenium compounds; Shotcreting; Substrates; Sulfur; Transition metals; Tungsten compounds, Contact areas; Hole conduction; Integrated technologies; Metal-induced gap state; N-channel transistors; Semiconductor industry; Transition metal dichalcogenides; Tungsten diselenide, Field effect transistors
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology) Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	03 Feb 2020 06:55
Last Modified:	03 Feb 2020 06:55
URI:	http://eprints.iisc.ac.in/id/eprint/64401

Actions (login required)

View Item