Physical Insights into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs - Part i

Joshi, V and Dutta Gupta, S and Roy Chaudhuri, R and Shrivastava, M (2021) Physical Insights into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs - Part i. In: IEEE Transactions on Electron Devices, 68 (1). pp. 72-79.

PDF IEEE_tra_ele_68-1_72-79_2021.pdf - Published Version Restricted to Registered users only Download (2MB) | Request a copy

Abstract

Impact of surface traps on the breakdown characteristics of AlGaN/GaN HEMT devices is revealed using detailed TCAD computations and supporting experiments. Detailed mechanism explaining the role of surface traps in modulating channel electric field under various surface trap, device design, gate-stack, and applied voltage conditions is discussed. Experimental analysis with different surface conditions shows the measured electric field profile, using electro-luminescence experiments, to be in complete agreement with the computational findings. Device design guidelines with respect to design parameters affecting drift region's electric field and gate-stack in presence of surface traps or varying surface trap concentration is presented. © 1963-2012 IEEE.

Item Type:	Journal Article
Publication:	IEEE Transactions on Electron Devices
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Aluminum gallium nitride; Electric field measurement; Electric fields; Gallium nitride; III-V semiconductors; Logic gates, AlGaN/GaN HEMTs; Applied voltages; Breakdown characteristics; Design parameters; Drift regions; Electric field profiles; Experimental analysis; Surface conditions, High electron mobility transistors
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	24 Feb 2023 05:20
Last Modified:	24 Feb 2023 05:20
URI:	https://eprints.iisc.ac.in/id/eprint/80457

Actions (login required)

View Item