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Shankar, Bhawani and Soni, Ankit and Gupta, Sayak Dutta and Shrivastava, Mayank (2018) Safe Operating Area (SOA) Reliability of Polarization Super Junction (PSJ) GaN FETs. In: 2018 IEEE International Reliability Physics Symposium (IRPS), 11-15 March 2018, Burlingame, CA, USA.
Paul, Milova and Kumar, BSampath and Gossner, Harald and Shrivastava, Mayank (2018) Contact and Junction Engineering in Bulk FinFET Technology for Improved ESD/Latch-up Performance with Design Trade-offs and its Implications on Hot Carrier Reliability. In: 2018 IEEE International Reliability Physics Symposium, IRPS 2018; Burlingame; United States; 11 March, 11-15 March 2018, Burlingame, CA, USA.
Sinha, Rajat and Bhattacharya, Prasenjit and Sambandan, Sanjiv and Shrivastava, Mayank (2018) On the ESD Behavior of a-Si:H based Thin Film Transistors: Physical Insights, Design and Technological Implications. In: IEEE International Reliability Physics Symposium Proceedings, 11-15 March 2018, Burlingame, CA, USA.
Kranthi, N K and Mishra, Abhishek and Meersha, Adil and Variar, Harsha B and Shrivastava, Mayank (2018) Defect-Assisted Safe Operating Area Limits and High Current Failure in Graphene FETs. In: 2018 IEEE International Reliability Physics Symposium (IRPS), 11-15 March 2018, Burlingame.
Shankar, Bhawani and Soni, Ankit and Gupta, Sayak Dutta and Sengupta, R and Khand, H and Mohan, N and Raghavan, Srinivasan and Shrivastava, Mayank (2018) On the Trap Assisted Stress Induced Safe Operating Area Limits of AlGaN/GaN HEMTs. In: 2018 IEEE International Reliability Physics Symposium, IRPS 2018; Burlingame; United States; 11 March, 11-15 March 2018, Burlingame, CA, USA.
Joshi, Vipin and Shankar, Bhawani and Tiwari, Shree Prakash and Shrivastava, Mayank (2017) Dependence of Avalanche Breakdown on Surface & Buffer Traps in AlGaN/GaN HEMTs. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), SEP 07-09, 2017, Kamakura, JAPAN, pp. 109-112.
Paul, Milova and Kumar, B Sampath and Russ, Christian and Gossner, Harald and Shrivastava, Mayank (2017) FinFET SCR: Design Challenges and Novel Fin SCR Approaches for On-Chip ESD Protection. In: 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), SEP 10-14, 2017, Tucson, AZ.
Shankar, Bhawani and Sengupta, Rudrarup and Gupta, Sayak Dutta and Soni, Ankit and Mohan, Nagaboopathy and Bhat, Navakanta and Raghavan, Srinivasan and Shrivastava, Mayank (2017) On the ESD Behavior of AlGaN/GaN Schottky Diodes and Trap Assisted Failure Mechanism. In: 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), SEP 10-14, 2017, Tucson, AZ.
Sinha, Rajat and Kranthi, N K and Sambandan, Sanjiv and Shrivastava, Mayank (2017) On the ESD Behavior of Pentacene Channel Organic Thin Film Transistors. In: 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), SEP 10-14, 2017, Tucson, AZ.
Shankar, Bhawani and Soni, Ankit and Singh, Manikant and Soman, Rohith and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakanta and Shrivastava, Mayank (2017) ESD Behavior of AlGaN/GaN HEMT on Si: Physical Insights, Design Aspects, Cumulative Degradation and Failure Analysis. In: 30th International Conference on VLSI Design / 16th International Conference on Embedded Systems (VLSID), JAN 07-11, 2017, Hyderabad, INDIA, pp. 361-365.
Kranthi, NK and Mishra, Abhishek and Meersha, Adil and Shrivastava, Mayank (2017) ESD Behavior of Large Area CVD Graphene RF Transistors: Physical Insights and Technology Implications. In: IEEE International Reliability Physics Symposium (IRPS), APR 02-06, 2017, Monterey, CA.
Kumar, B Sampath and Paul, Milova and Shrivastava, Mayank (2017) On the Design Challenges of Drain Extended FinFETs for Advance SoC Integration. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), SEP 07-09, 2017, Kamakura, JAPAN, pp. 189-192.
Paul, Milova and Russ, Christian and Kumar, B Sampath and Gossner, Harald and Shrivastava, Mayank (2017) Physics of Current Filamentation in ggNMOS Revisited: Was Our Understanding Scientifically Complete? In: 30th International Conference on VLSI Design / 16th International Conference on Embedded Systems (VLSID), JAN 07-11, 2017, Hyderabad, INDIA, pp. 391-394.
Meersha, Adil and Sathyajith, B and Shrivastava, Mayank (2017) A Systematic Study on the Hysteresis Behaviour and Reliability of MoS2 FET. In: 30th International Conference on VLSI Design / 16th International Conference on Embedded Systems (VLSID), JAN 07-11, 2017, Hyderabad, INDIA, pp. 435-440.
Shankar, Bhawani and Soni, Ankit and Singh, Manikant and Soman, Rohith and Chandrasekar, Hareesh and Mohan, Nagaboopathy and Mohta, Neha and Ramesh, Nayana and Prabhu, Shreesha and Kulkarni, Abhay and Nath, Digbijoy and Muralidharan, R and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakant and Shrivastava, Mayank (2017) Trap Assisted Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium (IRPS), APR 02-06, 2017, Monterey, CA.
Mishra, Abhishek and Shrivastava, Mayank (2016) New Insights on the ESD Behavior and Failure Mechanism of Multi Wall CNTs. In: IEEE International Reliability Physics Symposium (IRPS), APR 17-21, 2016, Pasadena, CA.
Meersha, Adil and Variar, H B and Bhardwaj, K and Mishra, A and Raghavan, S and Bhat, N and Shrivastava, Mayank (2016) Record Low Metal - (CVD) Graphene Contact Resistance Using Atomic Orbital Overlap Engineering. In: 62nd Annual IEEE International Electron Devices Meeting (IEDM), DEC 03-07, 2016, San Francisco, CA.
Mishra, Abhishek and Shrivastava, Mayank (2016) Unique Current Conduction Mechanism through Multi Wall CNT Interconnects under ESD Conditions. In: 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), SEP 11-16, 2016, Garden Grove, CA.
Shankar, Bhawani and Shrivastava, Mayank (2016) Unique ESD Behavior and Failure Modes of AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium (IRPS), APR 17-21, 2016, Pasadena, CA.
Tailor, Ketankumar H and Shrivastava, Mayank and Gossner, Harald and Baghini, Maryam Shojaei and Rao, Ramgopal V (2015) Comparison of Breakdown Characteristics of DeNMOS Devices with Various Drain Structures. In: IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), JUN 01-04, 2015, Singapore, INDIA, pp. 736-739.
Tailor, Ketankumar H and Shrivastava, Mayank and Gossner, Harald and Baghini, Maryam Shojaei and Rao, Ramgopal V (2015) On the Breakdown Physics of Trench-Gate Drain Extended NMOS. In: IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), JUN 01-04, 2015, Singapore, INDIA, pp. 804-807.
Shrivastava, Mayank and Gossner, Harald (2014) ESD Behavior of Metallic Carbon Nanotubes. In: 36th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), SEP 07-12, 2014, Tucson, AZ.
Kumar, B Sampath and Paul, Milova and Shrivastava, Mayank and Gossner, Harald (2018) Performance and Reliability Insights of Drain Extended FinFET Devices for High Voltage SoC Applications. In: 30th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), MAY 13-17, 2018, Chicago, IL, pp. 72-75.
Paul, Milova and Kumar, B Sampath and Nagothu, Kranthi Karmel and Singhal, Pulkit and Gossner, Harald and Shrivastava, Mayank (2019) Drain-Extended FinFET With Embedded SCR (DeFinFET-SCR) for High-Voltage ESD Protection and Self-Protected Designs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (12). pp. 5072-5079.
Sinha, Rajat and Bhattacharya, Prasenjit and Sambandan, Sanjiv and Shrivastava, Mayank (2019) Nano-second timescale high-field phase transition in hydrogenated amorphous silicon. In: JOURNAL OF APPLIED PHYSICS, 126 (13).
Shankar, Bhawani and Shrivastava, Mayank (2019) Safe Operating Area of Polarization Super-junction GaN HEMTs and Diodes. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (10). pp. 4140-4147.
Shankar, Bhawani and Raghavan, Srinivasan and Shrivastava, Mayank (2019) ESD Reliability of AlGaN/GaN HEMT Technology. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (9). pp. 3756-3763.
Shankar, Bhawani and Soni, Ankit and Chandrasekar, Hareesh and Raghavan, Srinivasan and Shrivastava, Mayank (2019) First Observations on the Trap-Induced Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (8). pp. 3433-3440.
Hemanjaneyulu, Kuruva and Kumar, Jeevesh and Shrivastava, Mayank (2019) MoS2 Doping Using Potassium Iodide for Reliable Contacts and Efficient FET Operation. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (7). pp. 3224-3228.
Shankar, Bhawani and Gupta, Sayak Dutta and Soni, Ankit and Raghavan, Srinivasan and Shrivastava, Mayank (2019) ESD Behavior of AlGaN/GaN Schottky Diodes. In: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 19 (2). pp. 437-444.
Sinha, Rajat and Bhattacharya, Prasenjit and Iben, Icko Eric Timothy and Sambandan, Sanjiv and Shrivastava, Mayank (2019) ESD Reliability Study of a-Si:H Thin-Film Transistor Technology: Physical Insights and Technological Implications. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (6). pp. 2624-2630.
Soni, Ankit and Shikha, Swati and Shrivastava, Mayank (2019) On the Role of Interface States in AlGaN/GaN Schottky Recessed Diodes: Physical Insights, Performance Tradeoff, and Engineering Guidelines. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (6). pp. 2569-2576.
Gupta, Sayak Dutta and Soni, Ankit and Joshi, Vipin and Kumar, Jeevesh and Sengupta, Rudrarup and Khand, Heena and Shankar, Bhawani and Mohan, Nagaboopathy and Raghavan, Srinivasan and Bhat, Navakanta and Shrivastava, Mayank (2019) Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By AlxTi1-xO Based Gate Stack Engineering. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (6). pp. 2544-2550.
Joshi, Vipin and Tiwari, Prakash and Shrivastava, Mayank (2019) Part I: Physical Insight Into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (1). pp. 561-569.
Joshi, Vipin and Tiwari, Prakash and Shrivastava, Mayank (2019) Part II: Proposals to Independently Engineer Donor and Acceptor Trap Concentrations in GaN Buffer for Ultrahigh Breakdown AlGaN/GaN HEMTs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (1). pp. 570-577.
Paul, Milova and Kumar, B Sampath and Russ, Christian and Gossner, Harald and Shrivastava, Mayank (2018) Challenges & Physical Insights Into the Design of Fin-Based SCRs and a Novel Fin-SCR for Efficient On-Chip ESD Protection. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (11). pp. 4755-4763.
Paul, Milova and Russ, Christian and Kumar, B Sampath and Gossner, Harald and Shrivastava, Mayank (2018) Physics of Current Filamentation in ggNMOS Devices Under ESD Condition Revisited. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (7). pp. 2981-2989.
Kumar, B Sampath and Shrivastava, Mayank (2018) Part I: On the Unification of Physics of Quasi-Saturation in LDMOS Devices. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (1). pp. 191-198.
Kumar, B Sampath and Shrivastava, Mayank (2018) Part II: RF, ESD, HCI, SOA, and Self Heating Concerns in LDMOS Devices Versus Quasi-Saturation. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (1). pp. 199-206.
Kranthi, Nagothu Karmel and Shrivastava, Mayank (2017) ESD Behavior of Tunnel FET Devices. In: IEEE Transactions on Electron Devices, 64 (1). pp. 28-36. ISSN 0018-9383
Shrivastava, Mayank (2017) Drain Extended Tunnel FET-A Novel Power Transistor for RF and Switching Applications. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (2). pp. 481-487.
Mishra, Abhishek and Gossner, Harald and Shrivastava, Mayank (2017) ESD Behavior of MWCNT Interconnects-Part I: Observations and Insights. In: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 17 (4). pp. 600-607.
Mishra, Abhishek and Shrivastava, Mayank (2017) ESD Behavior of MWCNT Interconnects-Part II: Unique Current Conduction Mechanism. In: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 17 (4). pp. 608-615.
Mishra, Abhishek and Nandan, Ravi and Raghavan, Srinivasan and Shrivastava, Mayank (2017) Nano-second time resolved investigations on thermal implications of high-field transport through MWCNTs. In: APPLIED PHYSICS LETTERS, 110 (23).
Mishra, Abhishek and Meersha, Adil and Raghavan, Srinivasan and Shrivastava, Mayank (2017) Observing non-equilibrium state of transport through graphene channel at the nano-second time-scale. In: APPLIED PHYSICS LETTERS, 111 (26).
Somayaji, Jhnanesh and Kumar, Sampath B and Bhat, M S and Shrivastava, Mayank (2017) Performance and Reliability Codesign for Superjunction Drain Extended MOS Devices. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (10). pp. 4175-4183.
Joshi, Vipin and Soni, Ankit and Tiwari, Shree Prakash and Shrivastava, Mayank (2016) A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs. In: IEEE TRANSACTIONS ON NANOTECHNOLOGY, 15 (6). pp. 947-955.
Swain, Peeyusha Saurabha and Shrivastava, Mayank and Baghini, Maryam Shojaei and Gossner, Harald and Rao, Valipe Ramgopal (2016) On the Geometrically Dependent Quasi-Saturation and g(m) Reduction in Advanced DeMOS Transistors. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (4). pp. 1621-1629.
Gupta, Ankur and Shrivastava, Mayank and Baghini, Maryam Shojaei and Sharma, Dinesh Kumar and Gossner, Harald and Rao, Ramgopal V (2016) On the Improved High-Frequency Linearity of Drain Extended MOS Devices. In: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 26 (12). pp. 999-1001.
Mishra, Abhishek and Shrivastava, Mayank (2016) Remote joule heating assisted carrier transport in MWCNTs probed at nanosecond time scale. In: PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 18 (41). pp. 28932-28938.
Hemanjaneyulu, Kuruva and Shrivastava, Mayank (2015) Fin-Enabled-Area-Scaled Tunnel FET. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 62 (10). pp. 3184-3191.
Gupta, Ankur and Shrivastava, Mayank and Baghini, Maryam Shojaei and Sharma, Dinesh Kumar and Gossner, Harald and Rao, Ramgopal V (2015) Part I: High-Voltage MOS Device Design for Improved Static and RF Performance. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 62 (10). pp. 3168-3175.
Tailor, Ketankumar H and Shrivastava, Mayank and Gossner, Harald and Baghini, Maryam Shojaei and Rao, Valipe Ramgopal (2015) Part I: Physical Insights Into the Two-Stage Breakdown Characteristics of STI-Type Drain-Extended pMOS Device. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 62 (12). pp. 4097-4104.
Gupta, Ankur and Shrivastava, Mayank and Baghini, Maryam Shojaei and Chandorkar, AN and Gossner, Harald and Rao, Ramgopal V (2015) Part II: A Fully Integrated RF PA in 28-nm CMOS With Device Design for Optimized Performance and ESD Robustness. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 62 (10). pp. 3176-3183.
Tailor, Ketankumar H and Shrivastava, Mayank and Gossner, Harald and Baghini, Maryam Shojaei and Rao, Valipe Ramgopal (2015) Part II: Design of Well Doping Profile for Improved Breakdown and Mixed-Signal Performance of STI-Type DePMOS Device. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 62 (12). pp. 4105-4113.
Ghatge, Mayur and Shrivastava, Mayank (2015) Physical Insights on the Ambiguous Metal-Graphene Interface and Proposal for Improved Contact Resistance. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 62 (12). pp. 4139-4147.
Shrivastava, Mayank and Kulshrestha, Neha and Gossner, Harald (2014) ESD Investigations of Multiwalled Carbon Nanotubes. In: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 14 (1). pp. 555-563.
