Drain Extended Tunnel FET-A Novel Power Transistor for RF and Switching Applications

Shrivastava, Mayank (2017) Drain Extended Tunnel FET-A Novel Power Transistor for RF and Switching Applications. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (2). pp. 481-487.

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Abstract

For the first time, a novel drain-extended tunnel FET (DeTFET) device is disclosed in this paper, while addressing the need for high-voltage/high-power devices for system-on-chip and automotive applications in beyond FinFET technology nodes. Operation of the proposed DeTFET device is presented with physics of band-to-band tunneling and associated carrier injection. Device's intrinsic (dc/switching), analog, and RF performance is compared with the state-of-the-art drain-extended nMOS (DeNMOS) device. The proposed device for 11 V breakdown voltage offers 15x better subthreshold slope, 8x lower off-state leakage, 2x higher on current, and absence of channel lengthmodulation and drain induced barrier lowering, while keeping 2.5x lower threshold voltage. This results into significantly better on resistance for a range of gate voltages, higher transconductance, orders of magnitude higher intrinsic transistor gain, and betterRF characteristics, when compared with the DeNMOS device. Finally, device design guidelines are presented and scalability, without affecting breakdown voltage, of the proposed device is compared with the DeNMOS device.

Item Type:	Journal Article
Publication:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Publisher:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Additional Information:	Copy right for this article belongs to the IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	03 Apr 2017 04:36
Last Modified:	03 Apr 2017 04:36
URI:	http://eprints.iisc.ac.in/id/eprint/56433

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