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ESD Behavior of Tunnel FET Devices

Kranthi, Nagothu Karmel and Shrivastava, Mayank (2017) ESD Behavior of Tunnel FET Devices. In: IEEE Transactions on Electron Devices, 64 (1). pp. 28-36. ISSN 0018-9383

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Official URL: https://doi.org/10.1109/TED.2016.2630079


For the first time, we present the electrostatic discharge (ESD) behavior of grounded gate tunnel FET (ggTFET) with detailed physical insight into the device operation, 3-D filamentation and failure under ESD stress conditions. Current as well as time evolution of the junction breakdown, device turn-ON, voltage snapback, and finally the unique failure mechanism is studied using both 2-D and 3-D technology computer aided design simulations. The interaction between the band-to-band tunneling, avalanche multiplication, and thermal carrier generation leading to voltage snapback and failure is presented in detail. In addition, electro-thermal instability initiated filamentation and snapback discovered in the ggTFET is explained. The impact of various technology and device design parameters on the ESD behavior and robustness of TFETs is discussed. This has helped developing guidelines to design ESD robust TFETs for efficient protection concepts. Finally, the charge device model behavior of ggTFET device is discussed.

Item Type: Journal Article
Publication: IEEE Transactions on Electron Devices
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords: Band-to-band tunneling (BTBT); electrostatic discharge (ESD); tunnel FET
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 14 Jun 2022 04:54
Last Modified: 14 Jun 2022 04:54
URI: https://eprints.iisc.ac.in/id/eprint/73402

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