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Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By AlxTi1-xO Based Gate Stack Engineering

Gupta, Sayak Dutta and Soni, Ankit and Joshi, Vipin and Kumar, Jeevesh and Sengupta, Rudrarup and Khand, Heena and Shankar, Bhawani and Mohan, Nagaboopathy and Raghavan, Srinivasan and Bhat, Navakanta and Shrivastava, Mayank (2019) Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By AlxTi1-xO Based Gate Stack Engineering. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (6). pp. 2544-2550.

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Official URL: https://doi.org/10.1109/TED.2019.2908960


In this paper, for the first time, we have experimentally demonstrated enhancement mode (e-mode) AlGaN/GaN high-electron-mobility transistor (HEMT) operation by integrating p-type high-kappa AlxTi1-xO based gate stack. Concentrationof Al in Al-Ti-O system was found to be a tuning parameter for the threshold voltage of GaN HEMTs. The high-kappa properties of AlxTi1-xO as a function of Al % are studied. Superiority of AlTiO over other p-oxides such as CuO and NiOx is proven statistically. Using the high-kappa and p-type AlTiO, in conjunction with a thinner AlGaN barrier under gate, 600-V e-mode GaN HEMTs are demonstrated with superior ON-state performance (I-ON similar to 400 mA/mm and R-ON = 8.9 Omega-mm) and gate control over channel (I-ON/I-OFF = 10(7), SS=73mV/dec, and gate leakage < 200nA/mm), beside improved safe operating area reliability.

Item Type: Journal Article
Additional Information: copyright for this article belongs to IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords: AlTiO gate; enhancement mode (e-mode) AlGaN/GaN high-electron-mobility transistors (HEMTs); energy band engineering; p-typemetal oxide; ternary oxide
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 09 Jul 2019 07:10
Last Modified: 09 Jul 2019 07:10
URI: http://eprints.iisc.ac.in/id/eprint/62860

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