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Trap Assisted Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs

Shankar, Bhawani and Soni, Ankit and Singh, Manikant and Soman, Rohith and Chandrasekar, Hareesh and Mohan, Nagaboopathy and Mohta, Neha and Ramesh, Nayana and Prabhu, Shreesha and Kulkarni, Abhay and Nath, Digbijoy and Muralidharan, R and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakant and Shrivastava, Mayank (2017) Trap Assisted Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium (IRPS), APR 02-06, 2017, Monterey, CA.

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Official URL: http://dx.doi.org/10.1109/IRPS.2017.7936414


This work reports the very first systematic study on the physics of avalanche instability and SOA concerns in AlGaN/GaN HEMT using sub-mu s pulse characterization, post stress degradation analysis, well calibrated TCAD simulations and failure analysis by SEM and TEM. Impact of electrical, as well as thermal effects on SOA boundary and avalanche instability are investigated. Trap assisted cumulative nature of degradation is studied in detail, which was discovered to be the root cause for avalanche instability in AlGaN/GaN HEMTs. Post failure SEM/TEM analysis reveal distinct failure modes in presence and absence of carrier trapping.

Item Type: Conference Proceedings
Series.: International Reliability Physics Symposium
Additional Information: Copy right for this article belongs to the IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 23 Dec 2017 08:32
Last Modified: 23 Dec 2017 08:32
URI: http://eprints.iisc.ac.in/id/eprint/58492

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