On the Role of Interface States in AlGaN/GaN Schottky Recessed Diodes: Physical Insights, Performance Tradeoff, and Engineering Guidelines

Soni, Ankit and Shikha, Swati and Shrivastava, Mayank (2019) On the Role of Interface States in AlGaN/GaN Schottky Recessed Diodes: Physical Insights, Performance Tradeoff, and Engineering Guidelines. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (6). pp. 2569-2576.

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Abstract

In this paper, the impact of donor and acceptor states at the Schottky interface of fully recessed AlGaN/GaN Schottky diode is physically modeled using device TCAD and detailed experiments. This allowed us to develop physical insights into recessed AlGaN/GaN diode's reverse breakdown, reverse leakage, and ON-state performance as a function of interface states and provided design guidelines to engineer fully recessed AlGaN/GaN Schottky diode for the maximum reverse breakdown and least reverse leakage without compromising its ON-state performance. It has been observed that donor states are responsible for high reverse leakage and reduced breakdown performance in Schottky diodes. On the other hand, the presence of acceptor states at the interface improves the diode leakage and breakdown voltage. Experiments involve a number of dry and wet surface treatments to: 1) validate computational findings and 2) find ways to cure or passivate donor states affected Schottky interface/recessed region. The introduction of acceptor traps at the Schottky interface has been proposed and experimentally verified using the Fluorine implant to cure donor state-affected Schottky interface, which improves the breakdown and reverse leakage characteristics significantly.

Item Type:	Journal Article
Publication:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Publisher:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Additional Information:	copyright for this article belongs to IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords:	AlGaN/GaN diode; GaN; GaN simulation; HEMT diode; power devices; surface treatment
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	11 Mar 2020 10:38
Last Modified:	11 Mar 2020 10:38
URI:	http://eprints.iisc.ac.in/id/eprint/62861

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