ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

On the Breakdown Physics of Trench-Gate Drain Extended NMOS

Tailor, Ketankumar H and Shrivastava, Mayank and Gossner, Harald and Baghini, Maryam Shojaei and Rao, Ramgopal V (2015) On the Breakdown Physics of Trench-Gate Drain Extended NMOS. In: IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), JUN 01-04, 2015, Singapore, INDIA, pp. 804-807.

[img] PDF
EDSSC_804_2015.pdf - Published Version
Restricted to Registered users only

Download (348kB) | Request a copy
Official URL: http://dx.doi.org/10.1109/EDSSC.2015.7285240


In this work, two drain extended NMOS (DeNMOS) devices, one with only planar gate and another with both planar gate and gate in a trench under the gate-drain overlap region (called trench-gate DeNMOS) are investigated. The latter device shows improved ON-state performance due to greater space charge control with addition of trench gate. The OFF-state breakdown physics is also compared with conventional DeNMOS device. Due to greater field spreading in the trench-gate device under OFF-state conditions, a distinct base-push effect is not observed, unlike conventional device. The oxide reliability in trench-gate device improves with an additional offset in the drift region. Therefore, the trench-gate DeNMOS can be used as an alternative to improve input/output (I/O) device performance and reliability in advanced system-on-chip (SoC) applications.

Item Type: Conference Proceedings
Additional Information: Copy right for this article belongs to the IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 22 Oct 2016 05:40
Last Modified: 22 Oct 2016 05:40
URI: http://eprints.iisc.ac.in/id/eprint/54626

Actions (login required)

View Item View Item