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ESD Behavior of MWCNT Interconnects-Part I: Observations and Insights

Mishra, Abhishek and Gossner, Harald and Shrivastava, Mayank (2017) ESD Behavior of MWCNT Interconnects-Part I: Observations and Insights. In: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 17 (4). pp. 600-607.

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Official URL: http://dx.doi.org/10.1109/TDMR.2017.2756924

Abstract

Multiwall carbon nanotube (MWCNT)-based interconnects have been shown to outperform conventional metal interconnects. For reliable operation of such interconnects, it is imperative to evaluate their reliability at possible fatal events. Here, we report the ESD reliability of MWCNT-based interconnects. High failure current of similar to 10 mA and unique failure behavior involving discrete and gradual breakdown of individual shells is reported. It was found that MWCNT interconnects change resistance in steps of fundamental quantum resistance (h/2e(2)) after individual shell burning. The role of individual shells, diameter, and resistance of the tube in deciding the ESD behavior is investigated, while monitoring the response on a shell-by-shell basis. Contrary to widespread notion of immunity of MWCNT interconnects to electromigration, the ESD-induced melting of contacts is also observed.

Item Type: Journal Article
Publication: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Publisher: 10.1109/TDMR.2017.2756924
Additional Information: Copy right for this article belongs to the IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 13 Jan 2018 06:51
Last Modified: 13 Jan 2018 06:51
URI: http://eprints.iisc.ac.in/id/eprint/58587

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