Nano-second timescale high-field phase transition in hydrogenated amorphous silicon

Sinha, Rajat and Bhattacharya, Prasenjit and Sambandan, Sanjiv and Shrivastava, Mayank (2019) Nano-second timescale high-field phase transition in hydrogenated amorphous silicon. In: JOURNAL OF APPLIED PHYSICS, 126 (13).

Preview	PDF supplementary information.pdf - Published Supplemental Material Download (1MB) | Preview
	PDF jou_app_phy_126-13_2019.pdf - Published Version Restricted to Registered users only Download (2MB) | Request a copy

Abstract

In this work, we report the phase transition behavior of hydrogenated amorphous silicon on the application of nanosecond timescale high-field pulse electrical stress. The transition of amorphous silicon to nanocrystalline silicon, confirmed through Raman spectroscopy, is marked by an abrupt change in the pulse I-V characteristics. The mechanism of the phase transition at high electric field involving the avalanche generation of charge carriers and optical phonon generation is discussed. The role of defect states in optical phonon localization and eventual phase transition is explored. The phase transition in the case of devices with a drain-gate underlap is also studied. The role of self-heating in accelerating the phase transition has also been explored. The impact of channel dimensions on the onset of the phase transition is also discussed. Characterization of the resultant nc-Si is done through deconvolution of the Raman spectra, and the quality of nc-Si created is found comparable to earlier studies.

Item Type:	Journal Article
Publication:	JOURNAL OF APPLIED PHYSICS
Publisher:	AMER INST PHYSICS
Additional Information:	Copyright of this article belongs to AMER INST PHYSICS
Keywords:	THRESHOLD-VOLTAGE SHIFT; CW LASER CRYSTALLIZATION; THIN-FILM TRANSISTORS; A-SIH TFTS; INSTABILITY MECHANISMS; DEPENDENCE
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology) Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	28 Nov 2019 10:47
Last Modified:	28 Nov 2019 10:47
URI:	http://eprints.iisc.ac.in/id/eprint/63835

Actions (login required)

View Item