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Safe Operating Area (SOA) Reliability of Polarization Super Junction (PSJ) GaN FETs

Shankar, Bhawani and Soni, Ankit and Gupta, Sayak Dutta and Shrivastava, Mayank (2018) Safe Operating Area (SOA) Reliability of Polarization Super Junction (PSJ) GaN FETs. In: 2018 IEEE International Reliability Physics Symposium (IRPS), 11-15 March 2018, Burlingame, CA, USA.

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Official URL: https://doi.org/10.1109/IRPS.2018.8353595


For the first time, this work reports Safe Operating Area (SOA) assessment and degradation physics in Polarization Super Junction (PSJ) based GaN FETs made on Silicon and sapphire substrates under high voltage and high current injection conditions. Impact of device design parameters on SOA, associated trap assisted device degradation, and thermal failure are studied. Correlation between polarization super junction length and failure threshold is discovered, beside power and field dependence of SOA boundary.

Item Type: Conference Proceedings
Series.: International Reliability Physics Symposium
Publisher: IEEE
Additional Information: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, MAR 11-15, 2018
Keywords: Polarization Super Junction; GaN FET; Safe Operating Area; Reliability
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 20 Jun 2019 18:36
Last Modified: 08 Jul 2019 11:47
URI: http://eprints.iisc.ac.in/id/eprint/63007

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