Joshi, Vipin and Shankar, Bhawani and Tiwari, Shree Prakash and Shrivastava, Mayank (2017) Dependence of Avalanche Breakdown on Surface & Buffer Traps in AlGaN/GaN HEMTs. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), SEP 07-09, 2017, Kamakura, JAPAN, pp. 109-112.
PDF
Ieee_Int_Con_Sim_Sem__Pro_Dev_109_2017.pdf - Published Version Restricted to Registered users only Download (1MB) | Request a copy |
Abstract
For the very first time, influence of traps on avalanche breakdown of AlGaN/GaN HEMTs is discussed. Impact of surface and bulk traps on breakdown voltage and device scaling is discussed with associated physics. Surface trap's were found to cause distinct breakdown characteristics with breakdown point varying from gate edge to drain edge, depending on nature, type and concentration. Buffer traps too influence the electric field near gate edge and leakage through the device, thereby affecting breakdown voltage accordingly.
Item Type: | Conference Proceedings |
---|---|
Series.: | International Conference on Simulation of Semiconductor Processes and Devices |
Publisher: | IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA |
Additional Information: | Copy right for the article belong to IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA |
Department/Centre: | Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology) |
Date Deposited: | 04 Apr 2018 18:50 |
Last Modified: | 04 Apr 2018 18:50 |
URI: | http://eprints.iisc.ac.in/id/eprint/59492 |
Actions (login required)
View Item |