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Defect-Assisted Safe Operating Area Limits and High Current Failure in Graphene FETs

Kranthi, N K and Mishra, Abhishek and Meersha, Adil and Variar, Harsha B and Shrivastava, Mayank (2018) Defect-Assisted Safe Operating Area Limits and High Current Failure in Graphene FETs. In: 2018 IEEE International Reliability Physics Symposium (IRPS), 11-15 March 2018, Burlingame.


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Official URL: https://doi.org/10.1109/IRPS.2018.8353571


In this work, a unique measurement setup, involving integration of transmission line pulse tester with Raman spectrometer, is used to investigate the pulsed safe operating area (SOA) boundary of graphene field effect transistors (GFETs). Physical insight into various SOA boundaries, i.e., near-electrical, electro-thermal and thermal, is given. Unique defect-assisted degradation in channel and its correlation with the carrier transport as well as failure is revealed, with the help of electrical as well as Raman spectroscopy based investigations during well controlled pulse-stressing of GFETs. The SOA and power to fail dependency on carrier concentration and nature of carrier transport is addressed.

Item Type: Conference Proceedings
Series.: International Reliability Physics Symposium
Publisher: IEEE
Additional Information: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, MAR 11-15, 2018
Keywords: Graphene; Electrostatic Discharge; Safe Operating Area (SOA)
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering > Electrical Communication Engineering - Technical Reports
Date Deposited: 20 Jun 2019 18:27
Last Modified: 27 Jun 2019 13:54
URI: http://eprints.iisc.ac.in/id/eprint/63004

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