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MoS2 Doping Using Potassium Iodide for Reliable Contacts and Efficient FET Operation

Hemanjaneyulu, Kuruva and Kumar, Jeevesh and Shrivastava, Mayank (2019) MoS2 Doping Using Potassium Iodide for Reliable Contacts and Efficient FET Operation. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (7). pp. 3224-3228.

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Official URL: https://dx.doi.org/10.1109/TED.2019.2916716


In this paper, we have demonstrated few-layer MoS2 doping using potassium iodide (KI) solution to realize stable/reliable ohmic contacts and achieve efficient electron transport. We have shown that KI doping allows MoS2 doping with a dopant density up to 1 x 10(12) cm(-2) near source/drain edge. The same has been explained using density-functional-theory (DFT)-based band structure calculations. KI doping of MoS2 resulted in contact resistance reduction by 3.5x (0.75 k Omega-mu m). The proposed technique and improved contacts have also resulted in 2x improvement in oN-state current (500 //A// m), transconductance and field-effect mobility (70 cm(2) /Vs) without compromising with oFF-state behavior, while maintaining ON to OFF ratio well above 106. The reproducibility of the transistor characteristics after a longer period (2 months) confirms the stability of proposed doping technique against environmental conditions.

Item Type: Journal Article
Additional Information: copyright for this article belongs to IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords: MoS2 doping; MoS2 FETs; potassium iodide (KI) treatment; surface charge transfer doping; transition metal dichalcogenide (TMD) doping
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 02 Aug 2019 11:14
Last Modified: 02 Aug 2019 11:14
URI: http://eprints.iisc.ac.in/id/eprint/63172

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