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Drain-Extended FinFET With Embedded SCR (DeFinFET-SCR) for High-Voltage ESD Protection and Self-Protected Designs

Paul, Milova and Kumar, B Sampath and Nagothu, Kranthi Karmel and Singhal, Pulkit and Gossner, Harald and Shrivastava, Mayank (2019) Drain-Extended FinFET With Embedded SCR (DeFinFET-SCR) for High-Voltage ESD Protection and Self-Protected Designs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (12). pp. 5072-5079.

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Official URL: https://dx.doi.org/10.1109/TED.2019.2949126


This article presents device design insights and design challenges for drain-extended FinFET devices with embedded silicon-controlled rectifier (SCR) (DeFinFET-SCR), which can be used as an electrostatic discharge (ESD) protection device and a self-protected high-voltage switch/driver for system-on-chip applications. The tradeoff between maximizing ESD robustness without hindering the transistor's operation is discussed in detail. An interplay between parasitic p-n-p turn-on and space charge modulation (SCM) is revealed, which strongly influences the strength of parasitic SCR and its turn-on efficiency during ESD and DC operations. Developed physical insights show that engineering p-n-p turn-on and onset of SCM are the key to maximize ESD robustness without causing early SCR turn-on during transistor operation. Based on new findings and developed physical insights, design guidelines have been derived for ESD robust DeFinFET-SCR.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords: Electrostatic discharges; Anodes; FinFETs; Charge carrier processes; Modulation; Stress; Drain-extended FinFET (DeFinFET); electrostatic discharge (ESD); silicon-controlled rectifier (SCR); technology computer-aided design (TCAD)
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 02 Jan 2020 07:30
Last Modified: 02 Jan 2020 07:30
URI: http://eprints.iisc.ac.in/id/eprint/64258

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