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ESD Reliability Study of a-Si:H Thin-Film Transistor Technology: Physical Insights and Technological Implications

Sinha, Rajat and Bhattacharya, Prasenjit and Iben, Icko Eric Timothy and Sambandan, Sanjiv and Shrivastava, Mayank (2019) ESD Reliability Study of a-Si:H Thin-Film Transistor Technology: Physical Insights and Technological Implications. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (6). pp. 2624-2630.

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Official URL: https://doi.org/ 10.1109/TED.2019.2913040


In this paper, we present the detailed physical insights into the electrostatic discharge (ESD) behavior of hydrogenated amorphous silicon (a-Si:H)-based thin-film transistor (TFT) technology. Device failure under ESD conditions is studied in detail using electrical and optical techniques. Device degradation under ESD timescales is studied using real-time capacitance-voltage and a spatially variant degradation behavior is reported. Variations in material properties are studied before and after device failure using Raman spectroscopy. Device dimension-dependent failure mechanism is explored. Impact of stressing conditions and presence of top passivation on failure behavior is also explored. Failure physics of technologically relevant device architectures including diode-connected transistors (gated diodes) and drain underlap TFTs and their increased ESD robustness is discussed. Finally, ESD behavior of a-Si:H-based TFTs is discussed.

Item Type: Journal Article
Additional Information: copyright for this article belongs to IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords: Amorphous silicon; defects; dielectric breakdown; drain underlap; electrostatic discharge (ESD); gated diodes; thin-film devices
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 12 Mar 2020 08:07
Last Modified: 12 Mar 2020 08:07
URI: http://eprints.iisc.ac.in/id/eprint/62862

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