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On the Improved High-Frequency Linearity of Drain Extended MOS Devices

Gupta, Ankur and Shrivastava, Mayank and Baghini, Maryam Shojaei and Sharma, Dinesh Kumar and Gossner, Harald and Rao, Ramgopal V (2016) On the Improved High-Frequency Linearity of Drain Extended MOS Devices. In: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 26 (12). pp. 999-1001.

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Official URL: http://dx.doi.org/10.1109/LMWC.2016.2623239


Based upon two-tone measurements, 5dB improvement in the linearity behavior of drain extended MOS (DeMOS) device is reported by novel drain engineering. The presented modification significantly improves the device saturation characteristic, ON resistance and transconductance without affecting the breakdown behavior. Formation of IMD sweet-spot by device design is shown and verified using DeMOS devices fabricated in state-of-the-art 28nm CMOS technology. Detailed analysis towards the achieved improvement is also given.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to theIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 31 Jan 2017 04:35
Last Modified: 31 Jan 2017 04:35
URI: http://eprints.iisc.ac.in/id/eprint/55970

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