Record Low Metal - (CVD) Graphene Contact Resistance Using Atomic Orbital Overlap Engineering

Meersha, Adil and Variar, H B and Bhardwaj, K and Mishra, A and Raghavan, S and Bhat, N and Shrivastava, Mayank (2016) Record Low Metal - (CVD) Graphene Contact Resistance Using Atomic Orbital Overlap Engineering. In: 62nd Annual IEEE International Electron Devices Meeting (IEDM), DEC 03-07, 2016, San Francisco, CA.

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Abstract

In this work, for the first time, different techniques to strengthen atomic orbital overlap are proposed to engineer metal graphene contact, while highlighting relevance of sp-hybridized carbon atoms in the contact region. The fundamental understanding of contact's quantum chemistry has resulted in record low contact resistance for CVD graphene when compared with the best reported till date for CVD as well as epitaxial graphene metal contacts. Role of contact engineering in terms of reaching graphene FET's intrinsic limits with scalability is presented in detail. Finally, record high transistor performance is demonstrated as a result of engineered contacts.

Item Type:	Conference Proceedings
Series.:	IEEE International Electron Devices Meeting
Additional Information:	62nd Annual IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, DEC 03-07, 2016
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology) Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	03 Jun 2017 09:45
Last Modified:	03 Jun 2017 09:45
URI:	http://eprints.iisc.ac.in/id/eprint/57130

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