Physics of Current Filamentation in ggNMOS Devices Under ESD Condition Revisited

Paul, Milova and Russ, Christian and Kumar, B Sampath and Gossner, Harald and Shrivastava, Mayank (2018) Physics of Current Filamentation in ggNMOS Devices Under ESD Condition Revisited. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (7). pp. 2981-2989.

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Abstract

This paper revisits the physics of current filamentation in grounded-gate NMOS (ggNMOS) devices and presents new physical insights which were not addressed in earlier works. A clear distinction between electrical and thermal instabilities is presented. Moreover, filament dynamics under electrical and thermal instability in both silicided and silicide blocked devices is discussed while highlighting observations which contradict with established theory of current ballasting. Interplay between electrical and thermal instabilities and its dependence on the presence or absence of silicide blocking is explored further. Filament spreading in ggNMOS devices and it is dependence on silicide blocking is discussed. Finally, while using the developed physical insights, missing correlation between TLP and HBM extracted failure current of silicided ggNMOS device is explained.

Item Type:	Journal Article
Publication:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Publisher:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Additional Information:	Copyright of this article belong to IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	16 Jul 2018 15:16
Last Modified:	25 Aug 2022 12:00
URI:	https://eprints.iisc.ac.in/id/eprint/60174

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