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A Systematic Study on the Hysteresis Behaviour and Reliability of MoS2 FET

Meersha, Adil and Sathyajith, B and Shrivastava, Mayank (2017) A Systematic Study on the Hysteresis Behaviour and Reliability of MoS2 FET. In: 30th International Conference on VLSI Design / 16th International Conference on Embedded Systems (VLSID), JAN 07-11, 2017, Hyderabad, INDIA, pp. 435-440.

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Official URL: http://dx.doi.org/10.1109/VLSID.2017.67


For reliable use of Molybdenum Disulfide (MoS2) FETs in ULSI applications device reliability issues like hysteresis behaviour and non idealities must be well understood and mitigated. In this work, we present unique hysteresis behaviour in the I-V characteristics of few layer MoS2 FETs. Root cause and physics behind the hysteresis behaviour has been explored by repeated experiments under various electrical, temperature, pressure, and environmental conditions. A trap based theory is proposed considering the device behaviour in different conditions and these observations give insight towards device passivation and choosing the right dielectric for reliable utilization of MoS2 FETs.

Item Type: Conference Proceedings
Series.: International Conference on VLSI Design
Additional Information: Copy right for this article belongs to the IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 08 Jul 2017 08:48
Last Modified: 08 Jul 2017 08:48
URI: http://eprints.iisc.ac.in/id/eprint/57334

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