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Number of items: 64.

Meneghini, M and Ng, GI and Medjdoub, F and Buffolo, M and Warnock, S and Nath, D and Suda, J and Shi, J and Shen, S-C (2024) Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications. In: IEEE Transactions on Electron Devices, 71 (3). pp. 1340-1343.

Joshi, V and Gupta, SD and Chaudhuri, RR and Shrivastava, M (2022) Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic RONin AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 69 (11). pp. 6035-6042.

Niranjan, S and Muralidharan, R and Sen, P and Nath, DN (2022) Au-Free AlGaN/GaN HEMT on Flexible Kapton Substrate. In: IEEE Transactions on Electron Devices, 69 (8). pp. 4212-4217.

Roul, B and Singh, DK and Chowdhury, AM and Kumari, M and Kumawat, KL and Nanda, KK and Krupanidhi, SB (2022) Enhancement of Photoresponsivity of β-In2S3/Si Broadband Photodetector by Decorating With Reduced-Graphene Oxide. In: IEEE Transactions on Electron Devices, 69 (8). pp. 4355-4361.

Kumar, J and Patbhaje, U and Shrivastava, M (2022) Role of Channel Inversion in Ambient Degradation of Phosphorene FETs. In: IEEE Transactions on Electron Devices, 69 (6). pp. 3353-3358.

Kranthi, NK and Sarro, JD and Rajagopal, K and Kunz, H and Sankaralingam, R and Boselli, G and Shrivastava, M (2022) Unique Rise Time Sensitivity Leading to Air Discharge System-Level ESD Failures in Bidirectional High Voltage SCRs. In: IEEE Transactions on Electron Devices, 69 (5). pp. 2552-2559.

Kumar, J and Meersha, A and Variar, HB and Mishra, A and Shrivastava, M (2022) Carbon Vacancy Assisted Contact Resistance Engineering in Graphene FETs. In: IEEE Transactions on Electron Devices, 69 (4). pp. 2066-2073.

Mishra, A and Shrivastava, M and Gupta, A (2022) The Root Cause Behind a Peculiar Dual-Mode ON-State Breakdown in High Voltage LDMOS. In: IEEE Transactions on Electron Devices, 69 (4). pp. 1906-1911.

Hemanjaneyulu, K and Meersha, A and Kumar, J and Shrivastava, M (2022) Unveiling Unintentional Fluorine Doping in TMDs During the Reactive Ion Etching: Root Cause Analysis, Physical Insights, and Solution. In: IEEE Transactions on Electron Devices, 69 (4). pp. 1956-1963.

Kranthi, NK and Boselli, G and Shrivastava, M (2022) HV-LDMOS Device Engineering Insights for Moving Current Filament to Enhance ESD Robustness. In: IEEE Transactions on Electron Devices, 69 (3). pp. 1242-1250.

Niranjan, S and Rao, A and Muralidharan, R and Sen, P and Nath, DN (2022) Performance Comparison of Au-Based and Au-Free AlGaN/GaN HEMT on Silicon. In: IEEE Transactions on Electron Devices, 69 (3). pp. 1014-1019.

Dutta Gupta, S and Joshi, V and Chaudhuri, RR and Shrivastava, M (2022) Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control over the 2-DEG. In: IEEE Transactions on Electron Devices, 69 (3). pp. 1608-1611.

Gupta, SD and Joshi, V and Chaudhuri, RR and Shrivastava, M (2021) Part I: Physical Insights into Dynamic RONBehavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 68 (11). pp. 5720-5727.

Joshi, V and Dutta Gupta, S and Roy Chaudhuri, R and Shrivastava, M (2021) Physical Insights into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs - Part i. In: IEEE Transactions on Electron Devices, 68 (1). pp. 72-79.

Chaudhuri, RR and Joshi, V and Gupta, SD and Shrivastava, M (2021) On the Channel Hot-Electron's Interaction with C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 68 (10). pp. 4869-4876.

Kumar, D and Krishnan N, S and Ramasesha, SK (2021) Spectral Response Enhancement of the CdS/CdTe Solar Nano-Structured Cell Using ZnO Window Layer. In: IEEE Transactions on Electron Devices, 68 (9). pp. 4504-4508.

Kranthi, NK and Sarro, JD and Sankaralingam, R and Boselli, G and Shrivastava, M (2021) System-Level IEC ESD Failures in High-Voltage DeNMOS-SCR: Physical Insights and Design Guidelines. In: IEEE Transactions on Electron Devices, 68 (9). pp. 4242-4250.

Roy, D and Tanujit, B and Jagannatha, KB and Asokan, S and Das, C (2021) Influence of Cu Doping in Si–Te-Based Chalcogenide Glasses and Thin Films: Electrical Switching, Morphological and Raman Studies. In: IEEE Transactions on Electron Devices, 68 (3). pp. 1196-1201.

Mondal, S and Kumar, A (2021) Tunable Electronic Trap Energy in Sol-Gel Processed Dielectrics. In: IEEE Transactions on Electron Devices, 68 (3). pp. 1190-1195.

Sharma, DK and Shyam Krishnan, N and Ilango, MS and Ramasesha, SK (2021) Efficiency Enhancement of the CdS/CdTe Solar Nanostructured Cell Using Electron-Reflecting Layer. In: IEEE Transactions on Electron Devices, 68 (3). pp. 1129-1134.

Joshi, V and Gupta, SD and Chaudhuri, RR and Shrivastava, M (2021) Interplay between Surface and Buffer Traps in Governing Breakdown Characteristics of AlGaN/GaN HEMTs - Part II. In: IEEE Transactions on Electron Devices, 68 (1). pp. 80-87.

Rathkanthiwar, S and Kalra, A and Muralidharan, R and Nath, DN and Raghavan, S (2020) V-Pits-Induced Photoresponse Enhancement in AlGaN UV-B Photodetectors on Si (111). In: IEEE Transactions on Electron Devices, 67 (10). pp. 4281-4287.

Sanjay, S and Sahoo, K and Bhat, N (2020) Alcohol-Based Sulfur Treatment for Improved Performance and Yield in Local Back-Gated and Channel-Length-Scaled MoS FETs. In: IEEE Transactions on Electron Devices, 67 (9). pp. 3711-3715.

Chourasia, NK and Singh, AK and Rai, S and Sharma, A and Chakrabarti, P and Srivastava, A and Pal, BN (2020) A Lithography-Free Fabrication of Low-Operating Voltage-Driven, Very Large Channel Length Graphene Field-Effect Transistor with NH3Sensing Application. In: IEEE Transactions on Electron Devices, 67 (10). pp. 4385-4391.

Paul, M and Sampath Kumar, B and Gossner, H and Shrivastava, M (2020) Engineering Schemes for Bulk FinFET to Simultaneously Improve ESD/Latch-Up Behavior and Hot Carrier Reliability. In: IEEE Transactions on Electron Devices, 67 (7). pp. 2745-2751.

Remesh, N and Mohan, N and Raghavan, S and Muralidharan, R and Nath, DN (2020) Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 67 (6). pp. 2311-2317.

Remesh, N and Mohan, N and Raghavan, S and Muralidharan, R and Nath, DN (2020) Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 67 (6). pp. 2311-2317.

Kumar, BS and Paul, M and Gossner, H and Shrivastava, M (2020) Physical Insights into the ESD Behavior of Drain Extended FinFETs (DeFinFETs) and Unique Current Filament Dynamics. In: IEEE Transactions on Electron Devices, 67 (7). pp. 2717-2724.

Shankar, B and Soni, AG and Shrivastava, M (2020) Electro-thermo-mechanical reliability of recessed barrier AlGaN/GaN schottky diodes under pulse switching conditions. In: IEEE Transactions on Electron Devices, 67 (5). pp. 2044-2051.

Soni, A and Ajay, . and Shrivastava, M (2020) Novel Drain-Connected Field Plate GaN HEMT Designs for Improved VBD-RON Tradeoff and RF PA Performance. In: IEEE Transactions on Electron Devices, 67 (4). pp. 1718-1725.

Panigrahi, R and Joy Thomas, M and Vinoy, KJ (2020) A New Fabrication Method for Serpentine-Folded Waveguide Slow Wave Structure at W -Band. In: IEEE Transactions on Electron Devices, 67 (3). pp. 1198-1204.

Ansh, A and Shrivastava, M and Kumar, J and Sheoran, G and Variar, HB and Mishra, R and Kuruva, H and Meersha, A and Mishra, A and Raghavan, S (2020) Chalcogen-assisted enhanced atomic orbital interaction at TMD-metal interface and sulfur passivation for overall performance boost of 2-D TMD FETs. In: IEEE Transactions on Electron Devices, 67 (2). pp. 717-724.

Ansh, . and Kumar, J and Sheoran, G and Mishra, R and Raghavan, S and Shrivastava, M (2020) Selective Electron or Hole Conduction in Tungsten Diselenide (WSe2) Field-Effect Transistors by Sulfur-Assisted Metal-Induced Gap State Engineering. In: IEEE Transactions on Electron Devices, 67 (1). pp. 383-388.

Shankar, B and Raghavan, S and Shrivastava, M (2020) Distinct Failure Modes of AlGaN/GaN HEMTs under ESD Conditions. In: IEEE Transactions on Electron Devices, 67 (4). pp. 1567-1574.

Shankar, B and Shrivastava, M (2019) Safe Operating Area of Polarization Super-junction GaN HEMTs and Diodes. In: IEEE Transactions on Electron Devices, 66 (10). pp. 4140-4147.

Nittala, PVK and Sahoo, K and Bhat, N and Bhat, KN and Sen, P (2019) Effect of substrate transfer on performance of vertically stacked ultrathin MOS devices. In: IEEE Transactions on Electron Devices, 66 (3). pp. 1153-1159.

Kumar, S and Kumar, H and Vura, S and Pratiyush, AS and Charan, VS and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2019) Investigation of Ta 2 O 5 as an alternative high-k dielectric for InAlN/GaN MOS-HEMT on Si. In: IEEE Transactions on Electron Devices, 66 (3). pp. 1230-1235.

Roul, B and Pant, R and Chowdhury, AM and Chandan, G and Singh, DK and Chirakkara, S and Nanda, KK and Krupanidhi, SB (2019) Highly responsive ZnO/AlN/Si heterostructure-based infrared- and visible-blind ultraviolet photodetectors with high rejection ratio. In: IEEE Transactions on Electron Devices, 66 (3). pp. 1345-1352.

Kranthi, Nagothu Karmel and Shrivastava, Mayank (2017) ESD Behavior of Tunnel FET Devices. In: IEEE Transactions on Electron Devices, 64 (1). pp. 28-36. ISSN 0018-9383

Marques, Gabriel Cadilha and Garlapati, Suresh Kumar and Chatterjee, Debaditya and Dehm, Simone and Dasgupta, Subho and Aghassi, Jasmin and Tahoori, Mehdi B (2017) Electrolyte-Gated FETs Based on Oxide Semiconductors: Fabrication and Modeling. In: IEEE Transactions on Electron Devices, 64 (1). pp. 279-285. ISSN 0018-9383

Talukder, Santanu and Kumar, Praveen and Pratap, Rudra (2013) Electric current-induced mass flow in very thin infinite metallic films. In: IEEE Transactions on Electron Devices, 60 (9). pp. 2877-2883.

Sengupta, Amretashis and Ghosh, Ram Krishna and Mahapatra, Santanu (2013) Performance Analysis of Strained Monolayer MoS2 MOSFET. In: IEEE Transactions on Electron Devices, 60 (9). pp. 2782-2787.

Verma, Rekha and Bhattacharya, Sitangshu and Mahapatra, Santanu (2013) Modeling of temperature and field-dependent electron mobility in a single-layer graphene sheet. In: IEEE Transactions on Electron Devices, 60 (8). pp. 2695-2698.

Sharan, Neha and Mahapatra, Santanu (2013) Nonquasi-static charge model for common double-gate MOSFETs adapted to gate oxide thickness asymmetry. In: IEEE Transactions on Electron Devices, 60 (7). pp. 2419-2422.

Verma, Rekha and Bhattacharya, Sitangshu and Mahapatra, Santanu (2013) Thermoelectric performance of a single-layer graphene sheet for energy harvesting. In: IEEE Transactions on Electron Devices, 60 (6). pp. 2064-2070.

Padmanabhan, Revathy and Bhat, Navakanta and Mohan, Sangeneni (2013) Performance and reliability of Gd2O3 and stacked Gd2O3-Eu2O3 metal-insulator-metal capacitors. In: IEEE Transactions on Electron Devices, 60 (5). pp. 1523-1528.

Jandhyala, Srivatsava and Abraham, Aby and Anghel, Costin and Mahapatra, Santanu (2012) Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFET. In: IEEE Transactions on Electron Devices, 59 (7). pp. 1974-1979.

Padmanabhan, Revathy and Bhat, Navakanta and Mohan, S (2012) High-Performance Metal-Insulator-Metal Capacitors Using Europium Oxide as Dielectric. In: IEEE Transactions on Electron Devices, 59 (5). pp. 1364-1370.

Abraham, Aby and Jandhyala, Srivatsava and Mahapatra, Santanu (2012) Improvements in Efficiency of Surface Potential Computation for Independent DG MOSFET. In: IEEE Transactions on Electron Devices, 59 (4). pp. 1199-1202.

Jandhyala, Srivatsava and Kashyap, Rutwick and Anghel, Costin and Mahapatra, Santanu (2012) A Simple Charge Model for Symmetric Double-Gate MOSFETs Adapted to Gate-Oxide-Thickness Asymmetry. In: IEEE Transactions on Electron Devices, 59 (4). pp. 1002-1007.

Verma, Rekha and Bhattacharya, Sitangshu and Mahapatra, Santanu (2012) Theoretical estimation of electromigration in metallic carbon nanotubes considering self-heating effect. In: IEEE Transactions on Electron Devices, 59 (9). pp. 2476-2482.

Verma, Rekha and Bhattacharya, Sitangshu and Mahapatra, Santanu (2011) Analytical Solution of Joule-Heating Equation for Metallic Single-Walled Carbon Nanotube Interconnects. In: IEEE Transactions on Electron Devices, 58 (11). pp. 3991-3996.

Jandhyala, Srivatsava and Mahapatra, Santanu (2011) An Efficient Robust Algorithm for the Surface-Potential Calculation of Independent DG MOSFET. In: IEEE Transactions on Electron Devices, 58 (6). pp. 1663-1671.

Thakur, Pankaj Kumar and Mahapatra, Santanu (2011) Large-Signal Model for Independent DG MOSFET. In: IEEE Transactions on Electron Devices, 58 (1). pp. 46-52.

Majumdar, Kausik and Bhat, Navakanta and Majhi, Prashant and Jammy, Raj (2010) Effects of Parasitics and Interface Traps on Ballistic Nanowire FET in the Ultimate Quantum Capacitance Limit. In: IEEE Transactions on Electron Devices, 57 (9). pp. 2264-2273.

Sumathy, M and Vinoy, KJ and Datta, SK (2010) Analysis of Ridge-Loaded Folded-Waveguide Slow-Wave Structures for Broadband Traveling-Wave Tubes. In: IEEE Transactions on Electron Devices, 57 (6). pp. 1440-1446.

Sahoo, A and Thakur, PK and Mahapatra, S (2010) A Computationally Efficient Generalized Poisson Solution for Independent Double-Gate Transistors. In: IEEE Transactions on Electron Devices, 57 (3). pp. 632-636.

Ray, Biswajit and Mahapatra, Santanu (2009) Modeling of Channel Potential and Subthreshold Slope of Symmetric Double-Gate Transistor. In: IEEE Transactions on Electron Devices, 56 (2). pp. 260-266.

Ray, Biswajit and Mahapatra, Santanu (2008) Modeling and Analysis of Body Potential of Cylindrical Gate-All-Around Nanowire Transistor. In: IEEE Transactions on Electron Devices, 55 (9). pp. 2409-2416.

Sathe, Chaitanya and Dan, Surya Shankar and Mahapatra, Santanu (2008) Assessment of SET Logic Robustness Through Noise Margin Modeling. In: IEEE Transactions on Electron Devices, 55 (3). pp. 909-915.

Paul, Bipul Chandra and Satyam, M and Selvarajan, A (1999) A Novel Method of Optical Detection Using a Capacitive Device. In: IEEE Transactions on Electron Devices, 46 (2). pp. 324-328.

Rogers, CP and Inam, A and Hegde, MS and Venkatesan, T and Wu, XD and Dutta, B (1989) Heteroepitaxial Yba2cu3o7-X-Prba2cu3o7-X-Yba2cu3o7-X Weak Links Grown By Laser Deposition. In: IEEE Transactions on Electron Devices, 36 (11). p. 2631.

Vishwanatha, KV and Satyam, M (1979) Effect of a linear potential variation on the gate of an FET. In: IEEE Transactions on Electron Devices, 26 (7). pp. 1102-1103.

Chakrabarti, Utpal K (1975) Approximate solution for the redistribution of impurities during second oxidation. In: IEEE Transactions on Electron Devices, 22 (8). pp. 566-568.

This list was generated on Sat Jun 22 09:38:34 2024 IST.