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Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications

Meneghini, M and Ng, GI and Medjdoub, F and Buffolo, M and Warnock, S and Nath, D and Suda, J and Shi, J and Shen, S-C (2024) Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications. In: IEEE Transactions on Electron Devices, 71 (3). pp. 1340-1343.

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Official URL: https://doi.org/10.1109/TED.2024.3359934
Item Type: Journal Article
Publication: IEEE Transactions on Electron Devices
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: The copyright for this article belongs to the Author.
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 23 Apr 2024 06:53
Last Modified: 23 Apr 2024 06:53
URI: https://eprints.iisc.ac.in/id/eprint/84643

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