Performance Analysis of Strained Monolayer MoS2 MOSFET

Sengupta, Amretashis and Ghosh, Ram Krishna and Mahapatra, Santanu (2013) Performance Analysis of Strained Monolayer MoS2 MOSFET. In: IEEE Transactions on Electron Devices, 60 (9). pp. 2782-2787.

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Abstract

We present a computational study on the impact of tensile/compressive uniaxial (epsilon(xx)) and biaxial (epsilon(xx) = epsilon(yy)) strain on monolayer MoS2, n-, and p-MOSFETs. The material properties like band structure, carrier effective mass, and the multiband Hamiltonian of the channel are evaluated using the density functional theory. Using these parameters, self-consistent Poisson-Schrodinger solution under the nonequilibrium Green's function formalism is carried out to simulate the MOS device characteristics. 1.75% uniaxial tensile strain is found to provide a minor (6%) ON current improvement for the n-MOSFET, whereas same amount of biaxial tensile strain is found to considerably improve the p-MOSFET ON currents by 2-3 times. Compressive strain, however, degrades both n-MOS and p-MOS devices performance. It is also observed that the improvement in p-MOSFET can be attained only when the channel material becomes indirect gap in nature. We further study the performance degradation in the quasi-ballistic long-channel regime using a projected current method.

Item Type:	Journal Article
Publication:	IEEE Transactions on Electron Devices
Publisher:	IEEE-Institute of Electrical and Electronics Engineers
Additional Information:	Copyright of this article belongs to IEEE-Institute of Electrical and Electronics Engineers.
Keywords:	Density Functional Theory (DFT); MoS2; MOSFET; Nonequilibrium Green's Function (NEGF); Strain
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	10 Oct 2013 05:24
Last Modified:	10 Oct 2013 05:24
URI:	http://eprints.iisc.ac.in/id/eprint/47482

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